[1] RIZZOLO R F, FOOTE T G, CRAFTS J M, et al. IBM System z9 eFUSE applications and methodology[J]. IBM Journal of Research and Development, 2007, 51(1/2): 65-75. [2] ROBSON N, SAFRAN J, KOTHANDARAMAN C, et al. Electrically programmable fuse (eFUSE): From memory redundancy to autonomic chips[C]// 2007 IEEE Custom Integrated Circuits Conference, San Jose, CA, USA, 2007: 799-804. [3] KOTHANDARAMAN C, IYER S K, IYER S S. Electrically programmable fuse (eFUSE) using electromigration in silicides[J]. IEEE Electron Device Letters, 2002, 23(9): 523-525. [4] FELLNER J, BOESMUELLER P, REITER H. Lifetime study for a poly fuse in a 0.35 μm polycide CMOS process[C]// 2005 IEEE International Reliability Physics Symposium, San Jose, CA, USA, 2005: 446-449. [5] TONTI W R. eFuse design and reliability[J]. IEEE International Integrated Reliability Workshop Final Report, 2008: 145-147. [6] ZHAO G Y, ZHAO Y, CHIEN W T K. Reliability investigations on the programming currents of 28 nm metal e-Fuse[C]// 2017 China Semiconductor Technology International Conference (CSTIC), Shanghai, China, 2017: 1-3. [7] 朱炜玲, 黄美浅, 章晓文, 等. 热载流子效应对n-MOSFETs可靠性的影响[J]. 华南理工大学学报(自然科学版), 2003, 31(7): 33-36. [8] 武建宏, 左卫松. 基于55 nm工艺大容量EFUSE烧写特性研究[J]. 集成电路应用, 2018, 35(6): 29-32. [9] TONT W R, FIFIELD J A, HIGGINS J, et al. Product specific sub-micron E-fuse reliability and design qualification[C]// IEEE International Integrated Reliability Workshop Final Report, Lake Tahoe, CA, USA, 2003: 36-40. [10] Kilopass Standard HLMC CMOS 40nm LP XPM Memory Datasheet V0.1[Z]. [11] UMC High Performance Compact Plus 1K Bits eFUSE Datasheet V0.2[Z]. [12] TSMC Electrical Fuse datasheet, TEF45GS512X8HD, 2011, Version 130B[Z]. [13] 晏颖, 金建明, 龚政. 冗余修正电路及应用其的冗余修正方法: CN109614275B[P]. 2022-06-14. [14] 晏颖, 金建明. 一种并行冗余修正电路: CN111243652B[P]. 2023-09-19. |