一种STT-MRAM型NVSRAM单元电路设计

doi:10.16257/j.cnki.1681-1070.2025.0050

电子与封装 ›› 2025, Vol. 25 ›› Issue (6): 060301 . doi: 10.16257/j.cnki.1681-1070.2025.0050

一种STT-MRAM型NVSRAM单元电路设计

李晓龙，王克鑫，叶海波

中国电子科技集团公司第五十八研究所，江苏无锡 214035

收稿日期:2024-11-05 出版日期:2025-06-27 发布日期:2025-06-27
作者简介:李晓龙（1994—），男，安徽亳州人，硕士，工程师，主要研究方向为大容量抗辐照SRAM电路。

Design of a NVSRAM Cell Circuit Based on STT-MRAM

LI Xiaolong, WANG Kexin, YE Haibo

ChinaElectronics Technology Group Corporation No. 58 Research Institute, Wuxi 214035, China

Received:2024-11-05 Online:2025-06-27 Published:2025-06-27

摘要/Abstract

摘要： 提出了一种基于自旋转移力矩磁随机存储器（STT-MRAM）的非易失性静态随机存储器（NVSRAM）单元电路结构。该结构主要由传统6T SRAM单元和非易失性磁性隧道结（MTJ）2部分构成，2者相互独立。在电路正常进行读写操作时MTJ模块不工作，电路等效为传统6T单元。只有在电路断电前，MTJ才开始存储节点数据，上电后存储节点自动恢复为断电前状态。这种独立模式极大地降低了电路功耗和时序复杂度。该电路读写操作和MTJ数据操作可以同步进行，MTJ存储数据不会影响当前存储节点的数据状态。仿真结果表明，该电路结构具有较低的写功耗，与6T单元相当。电路具有较短的数据恢复时间，仅需194 ps。

关键词: 自旋转移力矩磁随机存储器, 静态随机存储器, 非易失性, 低写功耗

Abstract: A non-volatile static random-access memory (NVSRAM) cell structure circuit based on spin transfer torque magnetic random access memory (STT-MRAM) is proposed. The structure mainly consists of two parts: a conventional 6T SRAM cell and non-volatile magnetic tunnel junctions (MTJs), which are independent of each other. During normal read/write operations, the MTJ modules do not operate and the circuit is equivalent to a conventional 6T cell. Only before the circuit is powered down, the MTJs start to store the node data, and after powering up, the storage nodes automatically recover the state before power down. This independent mode greatly reduces the power consumption and timing complexity of the circuit. The read/write operations of the circuit and the MTJ data operations can be synchronized, and the MTJ stored data will not affect the current storage node data state. Simulation results show that the proposed circuit structure has low write power consumption, which is comparable to that of a 6T cell. The circuit has a short data recovery time of only 194 ps.

Key words: STT-MRAM, SRAM, non-volatile, low write power consumption

中图分类号:

李晓龙，王克鑫，叶海波. 一种STT-MRAM型NVSRAM单元电路设计[J]. 电子与封装, 2025, 25(6): 060301 .

LI Xiaolong, WANG Kexin, YE Haibo. Design of a NVSRAM Cell Circuit Based on STT-MRAM[J]. Electronics & Packaging, 2025, 25(6): 060301 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

一种STT-MRAM型NVSRAM单元电路设计

Design of a NVSRAM Cell Circuit Based on STT-MRAM

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