先进封装中铜晶粒控制方法综述*

doi:10.16257/j.cnki.1681-1070.2025.0155

摘要/Abstract

摘要： 随着集成电路节点尺寸的缩小，摩尔定律发展放缓，先进封装成为维持集成电路性能继续提升的重要技术。铜具有优秀的导电性能和机械性能，作为互连材料在先进封装技术中被广泛使用。近年来，铜晶粒的微观结构对其在先进封装中的性能影响受到重视，一些具有独特微观结构、性能更加出众的铜晶体被相继发现并被尝试应用到先进封装中。综述了先进封装中几类典型微观结构铜晶粒的制备方法与工艺控制原理，为铜互连材料性能提升提供了参考。

关键词: 先进封装, 纳米孪晶铜, 电沉积, 晶粒控制

Abstract: As the size of integrated circuit nodes shrinks, Moore's Law is slowing down, and advanced packaging has become an important technology for maintaining the continued improvement of integrated circuit performance. Copper has excellent electrical conductivity and mechanical properties, and it is widely used as an interconnect material in advanced packaging technologies. In recent years, the impact of copper grain microstructure on its performance in advanced packaging has gained significant attention. Several copper crystals with unique microstructures and superior performance have been discovered and explored for application in advanced packaging. The preparation methods and process control principles of several typical microscopic structures of copper grains in advanced packaging are reviewed, which provides a reference for improving the performance of copper interconnect materials.

Key words: advanced packaging, nanotwined Cu, electrodeposition, grain control

中图分类号:

TN305.94

朱宏佳，杨刚力，李亚男，李力一. 先进封装中铜晶粒控制方法综述^*[J]. 电子与封装, 2025, 25(6): 060209 .

ZHU Hongjia, YANG Gangli, LI Ya’nan, LI Liyi. Review of Copper Grain Control Methods in Advanced Packaging[J]. Electronics & Packaging, 2025, 25(6): 060209 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

先进封装中铜晶粒控制方法综述^*

Review of Copper Grain Control Methods in Advanced Packaging

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