关键词: 单粒子翻转, 单粒子闩锁, 抗辐射加固

Abstract: In modern electronic devices and integrated circuit design, single event effects have become an issue that cannot be ignored. RISC-V IP has undergone multi-level radiation hardening in this paper, including triple modular redundancy and error detection and correction. In addition, the integrated circuit is fabricated and then subjected to radiation experiments. The experimental results indicate that the single event upset rate in GEO orbit is less than 10^-4 error/(device·day), and the single event latch-up threshold is greater than 75 MeV·cm²/mg, confirming the effectiveness of single event upset  and single event latch-up hardened design.

Key words: single event upset, single event latch-up, radiation hardened