中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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• 电路与系统 •    下一篇

支持预置位的电平转换结构设计

万璐绪,程雪峰,高国平   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡 214035
  • 收稿日期:2025-09-01 修回日期:2025-09-30 出版日期:2025-11-07 发布日期:2025-11-07
  • 通讯作者: 万璐绪

Design of Level Shifter Structure that Supports Preset Position

WAN Luxu, CHEN Xuefeng, GAO Guoping   

  1. China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214035, China
  • Received:2025-09-01 Revised:2025-09-30 Online:2025-11-07 Published:2025-11-07

摘要: 在现代集成电路设计中,为了追求低功耗需要将不同的电路设置在不同的工作电压下工作。为了实现不同工作电压之间的正确信号传输,需要在两套电压域系统中间插入电平转换单元。本文提出了一种新的电平转换结构,利用电路现态和次态,实现了转换过程中的预开启和预关断,可以实现稳定的电平转换和快速的切换速度。选用180 nm CMOS工艺设计,电路测试结果表明可以实现0.8 V到5.5 V的电平转换,最高速率可以达到804 Mbit/s。

关键词: 低功耗, 电平转换, 预开启, 预关断

Abstract: In modern integrated circuit design, to pursue low power consumption, it is necessary to operate different circuits at different working voltages. To achieve correct signal translation between different working voltages, a level shifter must be inserted between the two sets of voltage domain systems. This paper processes a new lever shifter structure that uses the current and next states of the circuit to achieve pre-activation and pre-turn-off during the conversion process, which can realize stable lever shift and fast switching speed. Design with the 180 nm CMOS process, the circuit test results show that it can achieve level shifter from 0.8 V to 5.5 V, and the maximum frequency can reach 804 Mbit/s.

Key words: low power consumption, level shifter, pre-activation, pre-turn-off