一种超低过冲电压的低功耗LDO电路设计
电子与封装
• 电路与系统 • 下一篇
任罗伟,袁介燕,冯建飞,高灿灿
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REN Luowei, YUAN Jieyan, FENG Jianfei, GAO Cancan
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摘要: 基于0.18 μm BCD工艺,设计并实现了一款低功耗低压差线性稳压器(LDO)电路。针对其在断电后快速上电场景下输出电压过冲显著的问题,提出了一种优化方法。在LDO输入级结构基础上,增加启动电路模块,产生启动信号。当芯片上电时,启动电路产生高电平脉冲信号,启动管开启,增大了运放尾电流,从而提高运放响应速度,减小输出过冲。实验结果表明,该方法将输出过冲由3.406 V减小到0.297 V,有效降低了输出电压过冲幅度,显著提升了LDO电路的瞬态响应性能与电路整体可靠性。
关键词: 稳压器, 低功耗, 输出过冲, 启动电路
Abstract: Based on a 0.18 μm BCD process, a low-power low-dropout linear regulator (LDO) circuit was designed and implemented. To address the significant output voltage overshoot issue during rapid power-on after shutdown, an optimization method is proposed. On the basis of the LDO input-stage structure, a startup circuit module is added to generate a startup signal. When the chip powers on, the startup circuit produces a high-level pulse signal, turning on the startup transistor. This increases the tail current of the operational amplifier, thereby enhancing its response speed and reducing output overshoot. Experimental results show that this method reduces the output overshoot from 3.406 V to 0.297 V, effectively mitigating the output voltage overshoot and significantly improving the transient response performance and overall reliability of the LDO circuit.
Key words: voltage regulator, low-power, output overshoot, startup circuit
任罗伟, 袁介燕, 冯建飞, 高灿灿.
一种超低过冲电压的低功耗LDO电路设计 [J]. 电子与封装, doi: 10.16257/j.cnki.1681-1070.2026.0046.
REN Luowei, YUAN Jieyan, FENG Jianfei, GAO Cancan. Low-Power LDO Featuring Ultralow Output Voltage Overshoot[J]. Electronics & Packaging, doi: 10.16257/j.cnki.1681-1070.2026.0046.
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链接本文: https://ep.org.cn/CN/10.16257/j.cnki.1681-1070.2026.0046