关键词: SBD, 孔洞缺陷, 失效机理, 退火时间, 可靠性提升

Abstract: This study investigates the reliability failure of a Schottky barrier diode by employing a comprehensive set of analytical techniques, including emission microscopy, focused ion beam microscopy , scanning electron microscopy, energy-dispersive X-ray spectroscopy , and direct-current parameter testing, to elucidate the underlying failure mechanism. The findings reveal that the failure is attributed to the dissolution and migration of silicon particles during the high-temperature annealing process, which subsequently aggregate at grain boundaries where the diffusion resistance is minimal. Under the thermal stress imposed during reliability environmental testing, void defects formed in these regions ultimately lead to device failure. Based on this mechanism, an improvement method involving the reduction of annealing time is proposed. Reliability test verification demonstrates that this approach effectively suppresses the aggregation of silicon at grain boundaries and enhances the overall reliability of the devices.

Key words: SBD, void defect, failure mechanism, annealing time, reliability enhancement