关键词: 晶圆级封装, 种子层, 刻蚀, 刻蚀速率

Abstract: In the metallization process of bonding ring for wafer-level package, the seed layers of copper and titanium are usually removed by two-step wet etching process. The process is carried out in two steps, with high cost and low efficiency, so it is necessary to explore a new corrosion process. The mixture of ammonia, hydrogen peroxide and water is usually called liquid No.1. By studying the corrosion characteristics of copper and titanium in different proportions of liquid No.1, an appropriate ratio is selected, so that liquid No.1 has an appropriate selection ratio for copper and titanium, achieving the goal of synthesizing seed layer etching from two steps to one step. The research shows that when the concentrations of ammonia water and hydrogen peroxide are 2.11 mol/L and 0.66 mol/L, respectively, a good etching morphology can be obtained by one-step method under the same conditions.

Key words: wafer-levelpackaging, seedlayer, etching, etchingrate