硅通孔3D互连热-力可靠性的研究与展望*

doi:10.16257/j.cnki.1681-1070.2024.0104

摘要/Abstract

摘要： 硅通孔（TSV）技术是3D集成封装中用于实现高密度、高性能互连的关键技术，TSV的热-力可靠性对3D集成封装的性能和寿命有直接影响。从TSV的制造工艺、结构布局、材料可靠性以及评估方法等多个方面对TSV 3D互连的热-力可靠性进行研究，对其研究方法和研究现状进行总结和阐述。此外，针对TSV尺寸减小至纳米级的发展趋势，探讨了纳米级TSV在应用于先进芯片背部供电及更高密度的芯片集成时所面临的可靠性挑战。

关键词: 封装技术, 硅通孔, 3D互连, 热-力可靠性

Abstract: Through silicon via (TSV) technology is a key technology used in 3D integrated packaging to achieve high-density and high-performance interconnection, the thermal-mechanical reliability of TSV has a direct impact on the performance and lifetime of 3D integrated packaging. The thermal-mechanical reliability of TSV 3D interconnection is investigated from the aspects of TSV fabrication process, structural layout, material reliability and evaluation method, and the research methods and current research status are summarized and elaborated. In addition, in response to the development trend of reducing the size of TSV to the nanoscale, the reliability challenges faced by nanoscale TSV in the application of advanced chip backside power supply and higher density chip integration are discussed.

Key words: packaging technology, through silicon via, 3D interconnection, thermal-mechanical reliability

中图分类号:

TN305.94

吴鲁超,陆宇青,王珺. 硅通孔3D互连热-力可靠性的研究与展望^*[J]. 电子与封装, 2024, 24(6): 060103 .

WU Luchao, LU Yuqing, WANG Jun. Research and Prospect on Thermal-Mechanical Reliability of Through Silicon Via 3D Interconnection[J]. Electronics & Packaging, 2024, 24(6): 060103 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

硅通孔3D互连热-力可靠性的研究与展望^*

Research and Prospect on Thermal-Mechanical Reliability of Through Silicon Via 3D Interconnection

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