TSV电镀过程中Cu生长机理的数值模拟研究进展*

doi:10.16257/j.cnki.1681-1070.2024.0109

摘要/Abstract

摘要： 近年来，电子信息行业的快速发展推动了封装技术的进步，对小型化、轻薄化、高性能和多功能化的电子设备提出了更高要求。硅通孔（TSV）技术是一种重要的先进封装技术，电沉积铜是其关键步骤之一。综述了TSV电镀过程中Cu生长的机理及数值模拟研究进展。TSV的深孔特性导致Cu生长过程中电流密度分布不均匀，从而产生不同的生长模式。有机添加剂在调节电流密度和防止缺陷填充方面发挥了关键作用。随着计算机技术的发展，数值模拟成为研究TSV电镀铜的重要手段，可降低实验成本，优化工艺参数。对TSV电镀铜的数值模拟发展进行了展望，强调了耦合影响因素的综合模拟是未来研究的重点。

关键词: 三维封装, TSV, 电镀铜, 数值模拟

Abstract: In recent years, the rapid development of the electronic information industry has driven the advancement of packaging technology, and put forward higher requirements for miniaturized, thin and light, high performance and multi-functional electronic devices. The through silicon via (TSV) technology is an important advanced packaging technology, in which copper electrodeposition is one of the key steps. The mechanism and numerical simulation progress of Cu growth in TSV during electroplating are reviewed. The deep-hole nature of TSV leads to uneven current density distribution during Cu growth, resulting in different growth modes. Organic additives play a key role in regulating the current density and preventing defect filling. With the development of computer technology, numerical simulation becomes an important tool to study TSV Cu electroplating, which can reduce the experimental cost and optimize the process parameters. The development of numerical simulation for TSV Cu electroplating is prospected, and the integrated simulation of coupled influencing factors is emphasized as the focus of future research.

Key words: three-dimensional packaging, through silicon via, Cu electroplating, numerical simulation

中图分类号:

TN305.94

许增光, 李哲, 钟诚, 刘志权. TSV电镀过程中Cu生长机理的数值模拟研究进展^*[J]. 电子与封装, 2024, 24(6): 060104 .

XU Zengguang, LI Zhe, ZHONG Cheng, LIU Zhiquan. Progress of Numerical Simulation of Cu Growth Mechanism During Electroplating of TSV[J]. Electronics & Packaging, 2024, 24(6): 060104 .

参考文献

[1] 高丽茵, 李财富, 刘志权, 等. 先进电子封装中焊点可靠性的研究进展[J]. 机械工程学报, 2022, 58(2): 185-202.
[2] KONDO K, SUZUKI Y, SAITO T, et al. High speed through silicon via filling by copper electrodeposition[J]. Electrochemical and Solid-State Letters, 2010, 13(5): D26-D30.
[3] HUANG S M, LIU C W, DOW W P. Effect of convection-dependent adsorption of additives on microvia filling in an acidic copper plating solution[J]. Journal of the Electrochemical Society, 2012, 159(3): D135-D141.
[4] CHEN Q W, WANG Z Y, CAI J, et al. The influence of ultrasonic agitation on copper electroplating of blind-vias for SOI three-dimensional integration[J]. Microelectronic Engineering, 2010, 87(3): 527-531.
[5] KONDO K, SUZUKI Y, SAITO T, et al. Shape evolution of electrodeposited bumps with shallow and deep cavities[J]. Journal of the Electrochemical Society, 2009, 156(12): D548-D557.
[6] HONG S C, LEE W G, KIM W J, et al. Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking[J]. Microelectronics Reliability, 2011, 51(12): 2228-2235.
[7] HAYASHI T, MATSUURA S, KONDO K, et al. Role of cuprous ion in copper electrodeposition acceleration[J]. Journal of the Electrochemical Society, 2015, 162(6): D199-D203.
[8] XU Z G, ZHONG C, LI Z, et al. Electrochemical simulation of electrodeposition growth of copper in Through Silicon Via (TSV)[C]//2023 24th International Conference on Electronic Packaging Technology (ICEPT), Shihezi, China, 2023: 1658-1662.
[9] WEST A C. Theory of filling of high‐aspect ratio trenches and vias in presence of additives[J]. Journal of the Electrochemical Society, 2019, 147(1): 227-232.
[10] 金磊, 杨家强, 杨防祖, 等. 芯片铜互连研究及进展[J]. 电化学, 2020, 26(4): 521-530.
[11] 林旭荣, 张剑如. 普通镀铜光亮剂在垂直电镀线的盲孔电镀填孔能力研究[J]. 印制电路信息, 2013, 21(4): 229-233.
[12] 朱盈. 硅通孔直流铜填充中添加剂协同效应的仿真[D]. 上海: 上海交通大学, 2016.
[13] LEFEBVRE M, ALLARDYCE G, SEITA M, et al. Copper electroplating technology for microvia filling[J]. Circuit World, 2003, 29(2): 9-14.
[14] 谌可馨, 高丽茵, 许增光, 等. 先进封装中硅通孔(TSV)铜互连电镀研究进展[J]. 科技导报, 2023, 41(5): 15-26.
[15] KELLY J J, WEST A C. Copper deposition in the presence of polyethylene glycol: I. quartz crystal microbalance study[J]. Journal of the Electrochemical Society, 1998, 145(10): 3472-3476.
[16] KELLY J J, WEST A C. Copper deposition in the presence of polyethylene glycol: Ⅱ. electrochemical impedance spectroscopy[J]. Journal of the Electrochemical Society, 1998, 145(10): 3477-3481.
[17] KANG M, GEWIRTH A A. Influence of additives on copper electrodeposition on physical vapor deposited (PVD) copper substrates[J]. Journal of the Electrochemical Society, 2003, 150(6): C426-C434.
[18] DOW W P, HUANG H S, YEN M Y, et al. Roles of chloride ion in microvia filling by copper electrodeposition[J]. Journal of the Electrochemical Society, 2005, 152(2): C77-C88.
[19] YOKOI M, KONISHI S, HAYASHI T. Adsorption behavior of polyoxyethyleneglycole on the copper surface in an acid copper sulfate bath[J]. Denki Kagaku Oyobi Kogyo Butsuri Kagaku, 1984, 52(4): 218-223.
[20] KO S L, LIN J Y, WANG Y Y, et al. Effect of the molecular weight of polyethylene glycol as single additive in copper deposition for interconnect metallization[J]. Thin Solid Films, 2008, 516(15): 5046-5051.
[21] KONDO K, MATSUMOTO T, WATANABE K. Role of additives for copper damascene electrodeposition[J]. Journal of the Electrochemical Society, 2004, 151(4): C250-C255.
[22] MOFFAT T P, BONEVICH J E, HUBER W H, et al. Superconformal electrodeposition of copper in 500-90 nm features[J]. Journal of the Electrochemical Society, 2000, 147(12): 4524-4535.
[23] KONDO K, YAMAKAWA N, TANAKA Z, et al. Copper damascene electrodeposition and additives[J]. Journal of Electroanalytical Chemistry, 2003, 559: 137-142.
[24] ADOLF J, LANDAU U. Predictive analytical fill model of interconnect metallization providing optimal additives concentrations[J]. Journal of the Electrochemical Society, 2011, 158(8): D469-D476.
[25] MOFFAT T P, WHEELER D, EDELSTEIN M D, et al. Superconformal film growth: mechanism and quantification[J]. IBM Journal of Research and Development, 2005, 49(1): 19-36.
[26] AKOLKAR R, LANDAU U. A time-dependent transport-kinetics model for additive interactions in copper interconnect metallization[J]. Journal of the Electrochemical Society, 2004, 151(11): C702-C712.
[27] 吴依彩, 毛子杰, 王翀, 等. 高端电子制造中电镀铜添加剂作用机制研究进展[J]. 中国科学(化学), 2021, 51(11): 1474-1488.
[28] DOW W P, LIU C W. Evaluating the filling performance of a copper plating formula using a simple galvanostat method[J]. Journal of the Electrochemical Society, 2006, 153(3): C190-C195.
[29] DOW W P, YEN M Y, LIAO S Z, et al. Filling mechanism in microvia metallization by copper electroplating[J]. Electrochimica Acta, 2008, 53(28): 8228-8237.
[30] DOW W P, YEN M Y, CHOU C W, et al. Practical monitoring of filling performance in a copper plating bath[J]. Electrochemical and Solid-State Letters, 2006, 9(8): 134-138.
[31] DOW W P, YEN M Y, LIU C W, et al. Enhancement of filling performance of a copper plating formula at low chloride concentration[J]. Electrochimica Acta, 2008, 53(10): 3610-3619.
[32] ZHU H P, ZHU Q S, ZHANG X, et al. Microvia filling by copper electroplating using a modified safranine T as a leveler[J]. Journal of the Electrochemical Society, 2017, 164(9): D645-D651.
[33] CHANG C, LU X B, LEI Z W, et al. 2-Mercaptopyridine as a new leveler for bottom-up filling of micro-vias in copper electroplating[J]. Electrochimica Acta, 2016, 208: 33-38.
[34] LEE M H, LEE Y, SUNG M, et al. Structural Influence of Terminal Functional Groups on TEG-Based Leveler in Microvia Filling[J]. Journal of The Electrochemical Society, 2020, 167(10): 102505-102512.
[34] LEE M H, LEE Y, SUNG M, et al. Structural influence of terminal functional groups on TEG-based leveler in microvia filling[J]. Journal of the Electrochemical Society, 2020, 167(10): 102505.
[35] LI J, XU J, WANG X M, et al. Novel 2, 5-bis(6-(trimethylamonium)hexyl)-3, 6-diaryl-1, 4-diketopyrrolo[3, 4-c]pyrrole pigments as levelers for efficient electroplating applications[J]. Dyes and Pigments, 2021, 186: 109064.
[36] JUN L. Simulation and characterisation of electroplated micro-copper columns for electronic interconnection[D]. Loughborough: Loughborough University, 2010
[37] PRICER T J, KUSHNER M J, ALKIRE R C. Monte Carlo simulation of the electrodeposition of copper[J]. Journal of the Electrochemical Society, 2002, 149(8): C406-C412.
[38] POHJORANTA A, TENNO R. A method for microvia-fill process modeling in a Cu plating system with additives[J]. Journal of the Electrochemical Society, 2007, 154(10): D502-D509.
[39] TENNO R, POHJORANTA A. An ALE model for prediction and control of the microvia fill process with two additives[J]. Journal of the Electrochemical Society, 2008, 155(5): D383-D388.
[40] WHEELER D, JOSELL D, MOFFAT T P. Modeling superconformal electrodeposition using the level set method[J]. Journal of the Electrochemical Society, 2003, 150(5): C302-C310.
[41] AKOLKAR R, DUBIN V. Pattern density effect on the bottom-up fill during damascene copper electrodeposition[J]. Electrochemical and Solid-State Letters, 2007, 10(6): D55-D60.
[42] KAUFMANN J G, DESMULLIEZ M P Y, TIAN Y T, et al. Megasonic agitation for enhanced electrodeposition of copper[J]. Microsystem Technologies, 2009, 15(8): 1245-1254.
[43] PRICER T J, KUSHNER M J, ALKIRE R C. Monte Carlo simulation of the electrodeposition of copper[J]. Journal of the Electrochemical Society, 2002, 149(8): C396-C405.
[44] KANEKO Y, HIWATARI Y, OHARA K. Monte Carlo simulation of thin film growth with defect formation: application to via filling[J]. Molecular Simulation, 2004, 30(13/14/15): 895-899.
[45] KANEKO Y, HIWATARI Y, OHARA K, et al. Kinetic Monte Carlo simulation of three-dimensional shape evolution with void formation using solid-by-solid model: Application to via and trench filling[J]. Electrochimica Acta, 2013, 100: 321-328.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

TSV电镀过程中Cu生长机理的数值模拟研究进展^*

Progress of Numerical Simulation of Cu Growth Mechanism During Electroplating of TSV

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