中国电子学会电子制造与封装技术分会会刊

中国半导体行业协会封测分会会刊

无锡市集成电路学会会刊

导航

电子与封装 ›› 2026, Vol. 26 ›› Issue (4): 040305 . doi: 10.16257/j.cnki.1681-1070.2026.0047

• 电路与系统 • 上一篇    下一篇

基于8051核的Flash读取控制电路的设计

黄坚,陈士金   

  1. 无锡中微爱芯电子有限公司,江苏 无锡  214072
  • 收稿日期:2025-09-25 出版日期:2026-04-28 发布日期:2025-12-05
  • 作者简介:黄坚(1984—),男,江苏无锡人,本科,工程师,主要研究方向为数模混合集成电路设计。

Design of Flash Read Control Circuit Based on 8051 Core

HUANG Jian, CHEN Shijin   

  1. Wuxi I-Core Electronics Co., Ltd., Wuxi 214072, China
  • Received:2025-09-25 Online:2026-04-28 Published:2025-12-05

摘要: Flash控制电路是MCU系统中不可或缺的一部分,对于Flash读取控制电路,地址锁存信号AE的设计极其关键,要满足Flash的读取建立时间以及Flash读取的时刻要求。对于以上2点要求,常用的解决方式是基于地址变化的方法,即用地址变化产生的脉冲信号作为Flash读取的地址锁存信号。但对于8051 CPU跳转指令来说,基于地址变化的方法会出现无效读取的情况,因此在地址变化的基础上增加了跳转指令控制逻辑,消除因跳转指令而导致Flash无效读取的情况,从而降低Flash的读取功耗。

关键词: Flash读取控制, 跳转指令, 低功耗, 8051MCU

Abstract: The Flash control circuit is an indispensable part of the MCU system. For the Flash read control circuit, the design of the address latch signal AE is crucial to meet the Flash read setup time and the timing requirements. To meet these requirements, a common approach is based on address changes, which uses the pulse signal generated by the address change as the address latch signal for Flash read. However, for 8051 CPU jump instructions, the method based on address changes can result in invalid reads. Therefore, in addition to the address changes, jump instruction control logic has been added to eliminate invalid Flash reads caused by jump instructions, thereby reducing the power consumption of Flash reads.

Key words: Flash read control, jump instruction, low power consumption, 8051 MCU

中图分类号: