关键词: 硅外延, 时间雾, 环境阳离子, 载片腔, HCl

Abstract: Based on the process and the environment of silicon epitaxy, the causes of time-dependent haze on 200 mm silicon epitaxial wafer are studied, and the influencing factors such as environmental humidity, exclusion ability before and after epitaxial reaction and environmental cation concentration in clean workshop are analyzed. The HCl, a by-product of silicon epitaxy reaction, and cations in the environment are the main causes of the time-dependent haze on the surface of silicon epitaxial wafer. The probability of time-dependent haze formation can be effectively reduced by enhancing the exclusion ability of silicon epitaxy equipment and reducing the concentration of cations in the environment.

Key words: silicon epitaxy, time-dependent haze, environmentalcation, loadlock, HCl