关键词: 逆导, 超结, 电压折回, IGBT, 导通压降, 关断损耗

Abstract: A novel superjunction reverse conducting insulated gate bipolar transistor (RC-IGBT) without snapback phenomenon is proposed, and the electrical characteristics are simulated based on Sentaurus TCAD. The proposed superjunction RC-IGBT separates the collector N⁺ region from the P⁺ region through the P-pillar, which eliminates the snapback phenomenon existing in the forward conduction of the conventional superjunction RC-IGBT. Compared with the conventional superjunction RC-IGBT structure, the forward conduction voltage of the new structure is reduced 20.9% and the reverse conduction voltage of the new structure is reduced 20.7% when the conduction current density is 100 A/cm², the turn-off loss of the new structure is reduced 19.9% under the same conduction voltage (1.55 V).

Key words: reverse conducting, superjunction, snapback, IGBT, conduction voltage, turn-off loss