一种具有载流子动态调制的双栅IGBT

doi:10.16257/j.cnki.1681-1070.2025.0137

电子与封装 ›› 2025, Vol. 25 ›› Issue (11): 110401 . doi: 10.16257/j.cnki.1681-1070.2025.0137

一种具有载流子动态调制的双栅IGBT

刘晴宇，杨禹霄，陈万军

电子科技大学电子薄膜与集成器件国家重点实验室，成都 610054

收稿日期:2025-03-23 出版日期:2025-11-28 发布日期:2025-04-30
作者简介:刘晴宇（2001—），女，河南焦作人，硕士研究生，主要研究方向为硅基功率器件。

Dual-Gate IGBT with Carrier Dynamic Modulation

LIU Qingyu, YANG Yuxiao, CHEN Wanjun

StateKey Laboratory of Electronic Thin Film and Integrated Device, University of Electronic Science andTechnology of China, Chengdu 610054, China

Received:2025-03-23 Online:2025-11-28 Published:2025-04-30

摘要/Abstract

摘要： 提出一种具有载流子动态调制功能并可显著降低关断损耗的双栅绝缘栅双极型晶体管（DG-IGBT）。基于计算机辅助设计技术（Sentaurus TCAD），对栅极控制不同元胞比例（1:2和1:4）的DG-IGBT进行了电学特性仿真。DG-IGBT通过动态调控载流子分布，在关断时降低漂移区内发射极侧的载流子浓度，促进耗尽区扩展，加快集电极电压上升速度，从而降低关断损耗。通过器件仿真与实验测试，系统研究载流子动态调制对绝缘栅双极型晶体管关断损耗的影响。测试结果表明，在电流密度100 A/cm²下关断时，元胞比例为1:2的DG-IGBT关断损耗降低22.2%，总关断损耗降低12.3%；元胞比例为1:4下，关断损耗降低37.2%，总关断损耗降低32.9%，有效改善IGBT导通压降与关断损耗的折中关系。

关键词: IGBT, 关断损耗, 双栅, 开关, 元胞比例

Abstract: A dual-gate insulated-gate bipolar transistor (DG-IGBT) with carrier dynamic modulation is proposed, which can significantly reduce the turn-off loss. Based on technology computer aided design (Sentaurus TCAD), electrical characteristics of DG-IGBTs with different gate control cell ratios (1:2 and 1:4) are simulated. The DG-IGBT dynamically modulates carrier distribution to reduce carrier concentration on the emitter side within the drift region during turn-off. This promotes depletion layer expansion and accelerates the rise rate of the collector voltage, thereby lowering turn-off loss. Through device simulation and experimental testing, the impact of carrier dynamic modulation on the turn-off loss of IGBTs is systematically investigated. Test results indicate that at a current density of 100 A/cm², the DG-IGBT with a cell ratio of 1:2 reduces turn-off loss by 22.2% and total turn-off loss by 12.3%, and the device with a cell ratio of 1:4 decreases turn-off loss by 37.2% and total turn-off loss by 32.9%, effectively improving the trade-off between IGBT on-state voltage drop and turn-off loss.

Key words: IGBT, turn-off loss, dual gate, switching, cell ratio

中图分类号:

TN303

刘晴宇，杨禹霄，陈万军. 一种具有载流子动态调制的双栅IGBT[J]. 电子与封装, 2025, 25(11): 110401 .

LIU Qingyu, YANG Yuxiao, CHEN Wanjun. Dual-Gate IGBT with Carrier Dynamic Modulation[J]. Electronics & Packaging, 2025, 25(11): 110401 .

参考文献

[1] BALIGA B J, ADLER M S, GRAY P V, et al. The insulated gate rectifier (IGR): a new power switching device[C]//1982 International Electron Devices Meeting, San Francisco, CA, USA, 1982: 264-267.
[2] NAKAGAWA A, OHASHI H, KURATA M, et al. Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO[C]//1984 International Electron Devices Meeting, San Francisco, CA, USA, 1984: 860-861.
[3] 叶立剑, 邹勉, 杨小慧. IGBT技术发展综述[J]. 半导体技术, 2008, 33(11): 937-940.
[4] 张金平, 赵倩, 高巍, 等. IGBT新技术及发展趋势[J]. 大功率变流技术, 2017(5): 21-28.
[5] 罗皓泽, 高洪艺, 朱春林, 等. 电动汽车IGBT芯片技术综述和展望[J]. 中国电机工程学报, 2020, 40(18): 5718-5730.
[6] JIA P C, GAO S D, LI Z Y, et al. Physics-embedded neural state-space module for single-shot lens-free on-chip microscopy[J]. Optics Letters, 2025, 50(20): 6357.
[7] KHANNA V K. IGBT theory and design[M]. Piscataway, NJ: IEEE Press, 2003: 1-14.
[8] 华经产业研究院. 2021-2026年中国IGBT行业市场供需格局及投资规划建议报告[R]. 北京: 华经产业研究院, 2021:1-12.
[9] IWAMURO N, LASKA T. IGBT history, state-of-the-art, and future prospects[J]. IEEE Transactions on Electron Devices, 2017, 64(3): 741-752.
[10] KAKUSHIMA K, HOSHII T, TSUTSUI K, et al. Experimental verification of a 3D scaling principle for low Vce(sat) IGBT[C]// 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2016: 10.6.1-10.6.4.
[11] BALIGA B J. An overview of smart power technology[J]. IEEE Transactions on Electron Devices, 1991, 38(7): 1568-1575.
[12] TAMAKI T, WALDEN G G, SUI Y, et al. Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs[J]. IEEE Transactions on Electron Devices, 2008, 55(8): 1928-1933.
[13] LASKA T, MUNZER M, PFIRSCH F, et al. The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential[C]// 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), Toulouse, France, 2000: 355-358.
[14] KITAGAWA M, OMURA I, HASEGAWA S, et al. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor[C]// Proceedings of IEEE International Electron Devices Meeting, Washington, DC, USA, 1993: 679-682.
[15] YAMAGUCHI, OMURA, URANO, et al. IEGT design criterion for reducing EMI noise [injection enhancement gate transistor[C]// 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, Kitakyushu, Japan, 2004: 115-118.
[16] OMURA I, DEMON T, MIYANAGI T, et al. IEGT design concept against operation instability and its impact to application[C]// 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), Toulouse, France, 2002: 25-28.
[17] 陈星弼, 张庆中, 陈勇. 微电子器件[M]. 3版. 北京: 电子工业出版社, 2011.
[18] BALIGA B J. Fundamentals of power semiconductor devices[M]. Berlin: Springer Science & Business Media,
2008: 1-21.
[19] RAMAMURTHY A, SAWANT S, BALIGA B J. Modeling the [dV/dt] of the IGBT during inductive turn off[J]. IEEE Transactions on Power Electronics, 1999, 14(4): 601-606.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

一种具有载流子动态调制的双栅IGBT

Dual-Gate IGBT with Carrier Dynamic Modulation

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	钟昂，戴畅. 模拟开关通用测试系统研究[J]. 电子与封装, 2025, 25(4): 40207-.
[2]	黄合磊, 佴宇飞, 虞致国, 顾晓峰. 基于开关电容放大器的低面积开销ADC^*[J]. 电子与封装, 2023, 23(8): 80301-.
[3]	李幸和, 唐路, 白雪婧. 基于互感开关变压器的毫米波宽带数控振荡器[J]. 电子与封装, 2023, 23(5): 50308-.
[4]	许超;吴叶;常伟;李珂. 一种输出可调的高精度开关电容基准电压源[J]. 电子与封装, 2023, 23(2): 20302-.
[5]	谢凌寒,孙祎轩,周颖,荣悦. 一种基于ACOT的Buck型开关电源设计[J]. 电子与封装, 2023, 23(11): 110303-.
[6]	张峰, 张国良. 宽禁带半导体碳化硅IGBT器件研究进展与前瞻^*[J]. 电子与封装, 2023, 23(1): 10109-.
[7]	陈波寅, 胡晓琛, 张智, 赵赛. 用于FPGA的高效可测性设计[J]. 电子与封装, 2022, 22(9): 90304-.
[8]	吴毅, 夏云, 刘超, 陈万军. 一种新型无电压折回现象的超结逆导型IGBT[J]. 电子与封装, 2022, 22(9): 90401-.
[9]	杨晓磊;李士颜;赵志飞;李赟;黄润华;柏松. 超高压碳化硅N沟道IGBT器件的设计与制造^*[J]. 电子与封装, 2022, 22(4): 40102-.
[10]	唐毓尚;王瑶;刘俊;李平. 基于漏电流补偿技术的超低漏电模拟开关[J]. 电子与封装, 2022, 22(12): 120306-.
[11]	管月;纪飞;汪渭滨. 有源箝位反激式DC-DC变换器恒定谷值电流控制策略[J]. 电子与封装, 2022, 22(11): 110306-.
[12]	马红跃，方健，雷一博，黎明，卜宁，张波. 一种总剂量辐照加固的双栅LDMOS器件[J]. 电子与封装, 2021, 21(8): 80401-.
[13]	程绪林;黄立朝;杨兵;张如州. 一种带使能控制的16选1高压模拟开关电路的设计[J]. 电子与封装, 2021, 21(6): 60303-.
[14]	黄立朝;阎燕山;程绪林;张如州. 一种高压模拟开关漏电失效解决方法[J]. 电子与封装, 2021, 21(4): 40404-.
[15]	肖紫嫣,刘超,夏云,陈万军. 具有三明治集电极结构的新型无电压回跳半超结RC-IGBT[J]. 电子与封装, 2020, 20(6): 60404-.