中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2018, Vol. 18 ›› Issue (10): 44 -47. doi: 10.16257/j.cnki.1681-1070.2018.0116

• 微电子制造与可靠性 • 上一篇    

光MOS继电器中的光电管设计

刘祥晟,张明,高向东   

  1. 无锡中微晶园电子有限公司,江苏 无锡 214035
  • 收稿日期:2018-06-07 出版日期:2018-10-20 发布日期:2018-10-20
  • 作者简介:刘祥晟(1966—),男,湖南邵阳人,毕业于电子科技大学微电子电路与系统专业,从事电子电路的开发与应用工作。

Photo Diode Design in Photoelectric Relays

LIU Xiangshen, ZHANG Ming, GAO Xiangdong   

  1. Wuxi Zhongwei Jingyuan Electronic Corporation, Wuxi 214035, China
  • Received:2018-06-07 Online:2018-10-20 Published:2018-10-20

摘要: 近年来,光MOS继电器以其可靠性高、开关速度快等优点越来越受到人们的关注。光电继电器通过将光学器件和功率半导体封装在同一管壳内,通过光电耦合技术实现了低压控制高压的开关,是一种新型的固体继电器。讨论了光MOS继电器的工作原理和结构特点,对其内部的光电二极管阵列结构进行了设计仿真,确定了光电二极管的衬底浓度和吸收厚度参数,并合理选择相应MOS功率管完成匹配。照此研制出的光电继电器产品可以满足市场需求。

关键词: 光继电器, 光电二极管阵列, 功率MOS管, 开关特性

Abstract: In recent years,photoelectric MOS relays are arousing increasingly interest for it’s high quality of reliability and switching speed. The photoelectric relays are a new kind of Solid-State-Relay by optical signal couple technology. It combined optical devices and power semiconductor devices packaged in one shell. The thesis discuss the theory and structure of the photoelectric MOS relays, by simulating the character of the photo diode array inside the relay,confirm the photo-diode substrate density and absorption thickness. By choose the appropriate power-MOS, the photoelectric relays can meet the need of the market.

Key words: photoelectric relays, photo-diode array, power MOS, switching characteristic

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