关键词: 248 nm DUV光刻机, 烘胶工艺, GaAs pHEMT, Ka波段, 低噪声放大器

Abstract: In this paper，the fabrication process of a 0.15 μm GaAs pHEMT process was reported，which based on the 248 nm DUV lithography and resist thermal reflow technology.The process was verified by mature wide Ka-band low noise amplifier circuit.RF testing results show that，in 26.5～40 GHz band，the small-signal gain is greater than 17.5 dB，and up to 19.9 dB at 29.5 GHz;the noise figure is less than 2.4 dB,and reaches the minimum 1.96 dB at 33.1 GHz.Both the input and output voltage standing wave ratios(VSWR)are less than 1.36,the output power of 1 dB compression point is more than 6.4 dBm,moreover,the DC power consumption is only about 142.5 mW.Compared with the same circuit based on electron beam direct writing bare gate technology,the key indicatorsand manufacturing efficiency hasimproved significantly.

Key words: 248 nm DUVlithography, resistthermalreflow process, GaAspHEMT, Kaband, low noiseamplifier