关键词: 低噪声放大器, 电流复用, 宽带, 负反馈

Abstract: Based on 0.15 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology, a broadband low noise amplifier with operating frequency covering 9-26 GHz is implemented.The amplifier adopts a three-stage cascaded common-source amplifier circuit structure. The first two stages of the amplifier use current multiplexing to reduce circuit power consumption and provide a higher gain. The parallel negative feedback structure is introduced in the last two stages to extend the bandwidth and improve the gain flatness.The test results show that in the broadband range of 9-26 GHz, the chip is powered by single +5 V power supply, the quiescent current is 55 mA, the noise factor is below 2.5 dB, the small signal gain is more than 18 dB and has a certain positive slope, the output power 1 dB compression point is higher than 13 dBm, and the size is 1.75 mm×1.05 mm. It has the advantages of wide band, low noise, low power consumption and small area.

Key words: low noise amplifier, current multiplexing, broadband, negative feedback