关键词: 功率器件, 金刚石, 嵌入式微流道, 正交试验法

Abstract: GaN power devices have many advantages such as high frequency, high power and high anti-interference ability. With the miniaturization and high integration of GaN power devices, the heat dissipation problem of the devices is becoming more and more prominent. Diamond with high thermal conductivity has become a competitive heat dissipation material to meet the heat dissipation needs of high power devices. A new type of multilayer embedded microfluidic channel diamond substrate heat dissipation technology is used to achieve rapid heat dissipation of the device, and the effects of several single factors, such as the width of heat dissipation microfluidic channels, the number of manifold microfluidic channels and the fluid flow rate, on the thermal performance of the device are analyzed, and the influence of different factors on the heat dissipation performance of the device is investigated by orthogonal test. The results show that the fluid flow rate has the most significant influence on the heat dissipation performance at a 99% confidence level. The effect of the diameter of the heat sink microfluidic channel is more significant, and the effect of the number of manifold microfluidic channels is not significant.

Key words: power device, diamond, embedded microfluidic channel, orthogonal test method