关键词: 硅通孔, 嵌套式电感器, 双螺旋, 三维集成电路

Abstract: To address the requirements for high inductance density and silicon-based three-dimensional integration in passive inductors for miniaturized and integrated radio frequency systems, a high-density inductor structure based on through silicon via technology is proposed in this work, along with an accurate analytical inductance model. This structure utilizes through silicon via and redistribution layers in a three-dimensional nested configuration to stack multiple spiral layers. The magnetic field density within the three-dimensional space in silicon substrate is enhanced by the magnetic field coupling between these spiral layers, achieving an inductance density of 119.7 nH/mm². By reducing the coupling length of parallel metal layers, parasitic capacitance is minimized, resulting in a self-resonant frequency of ~5 GHz and a high-quality factor. The proposed inductance analytical model is validated against finite element simulation results, with an error of less than 3.2%, confirming the accuracy of this model. The proposed double helix nested inductor, implemented with a silicon-based three-dimensional integration structure, demonstrates high inductance density and excellent wideband characteristics, providing an important solution for the miniaturization of passive inductors in radio frequency systems.

Key words: through silicon via, nested inductor, double helix, three-dimensional integration circuit