关键词: 硅通孔, 温度循环, 循环内聚力模型, 界面裂纹

Abstract: The TSV interface reliability problem has been a hot topic in the field of electronic packaging. Through numerical simulation, the cyclic cohesive model is used to study the damage cracking problem of Cu and SiO₂ interface under temperature cyclic loading. Firstly, a cyclic cohesive zone model considering fatigue damage was established based on the bilinear cohesive zone model, and the rationality of the model was verified. Finally, the damage and cracking phenomenon of the Cu and SiO₂ interface of TSV structures of different sizes under temperature cycling load was simulated, and its law was studied. The research results show that the interface strength between Cu and SiO₂ materials decreases continuously during the temperature cycling process, and the interface damage accumulates continuously. Finally, cracks are generated at the top of TSV and gradually expand. With the increase of TSV diameter, the crack propagation rate along the interface of Cu and SiO₂ gradually increases. The plastic deformation of Cu and interface damage and cracking have obvious size effects. The research results can be used to guide the optimization design of TSV interconnection structure.

Key words: through silicon via, thermal cycling, cyclic cohesive zone model, interface crack