中国电子学会电子制造与封装技术分会会刊

中国半导体行业协会封测分会会刊

无锡市集成电路学会会刊

导航

电子与封装 ›› 2026, Vol. 26 ›› Issue (2): 00 -020205. doi: 10.16257/j.cnki.1681-1070.2026.0022

• 封装、组装与测试 •    

高密度集成SiP的跨尺度建模方法研究

张劭春1,2,刘宁3,张景辉3,朱旻琦3,冯凯晨1,2,杨凝1,2,洪力1,2,李霄1,2,孙晓冬3,汪志强1,2   

  1. 1. 中国电子科技集团公司信息科学研究院,北京100086;2. 集成电路与微系统全国重点实验室,北京100086;3. 中国电子科技集团公司第五十八研究所,江苏 无锡 214035
  • 收稿日期:2025-08-01 出版日期:2026-03-03 发布日期:2026-03-03
  • 作者简介:张劭春(1996—),男,河北石家庄人,博士,工程师,主要研究方向为信号处理微系统建模仿真、异构集成微系统可靠性设计。

Multi-Scale Modeling Methods for High-Density Integrated SiP Modules

ZHANG Shaochun1,2,LIU Ning3,ZHANG Jinghui3,ZHU Minqi3,FENG Kaichen1,2,YANG Ning1,2,HONG Li1,2,LI Xiao1,2,SUN Xiaodong3, WANG Zhiqiang1,2   

  1. 1.Information Science Academy, China Electronics Technology GroupCorporation, Beijing 100086, China; 2. National Key Laboratory of IntegratedCircuits and Microsystems, Beijing 100086,China; 3. China ElectronicsTechnology Group Corporation No.58 Research Institute, Wuxi 214035, China
  • Received:2025-08-01 Online:2026-03-03 Published:2026-03-03

摘要: 为解决高密度集成的系统级封装(SiP)中复杂微结构带来的跨尺度建模问题,采用均质化等效方法将微结构转化为宏观均质模型,通过理论推导的等效热导率进行跨尺度热学建模。构建的简化模型减少了77.1%的网格数量,仿真效率提高到317.7%,且仅引入了小于2%的简化误差;通过创建微组件-SiP-插座-PCB的多层级电磁模型,模拟了不同层级间的信号干扰,对不同互连结构进行模型简化以解决复杂模型求解困难的问题。基于构建的多层级模型定位并解决了高速SerDes信号不同层级间垂直过渡结构的阻抗不连续问题,阻抗由71.9~81.9 Ω提升至88.1~96.1Ω。

关键词: 系统级封装, 跨尺度, 等效模型, 数值模拟

Abstract: To address the multi-scale modeling challenges posed by complex micro-structures in high-density system in package (SiP), a homogenization-based equivalence method is employed to transform the microstructures into a macroscopic homogeneous model. By theoretically deriving the equivalent thermal conductivity, a multi-scale thermal model is established. The simplified model reduces the mesh count by 77.1%, improves simulation efficiency to 317.7%, and introduces less than 2% error. A hierarchical electromagnetic model spanning micro components, SiP, sockets, and the PCB is constructed to simulate signal interference across different levels. To overcome the computational complexity of detailed interconnect structures, model simplification strategies are applied. Based on the hierarchical model, impedance discontinuities in vertical transition structures of high-speed SerDes signals are identified and resolved. As a result, the impedance is improved from 71.9 - 81.9 Ω to 88.1 - 96.1 Ω.

Key words: system in package, multi-scale, equivalent model, numerical simulation

中图分类号: