[1] NELSON Z, MO A, THEOGARAJAN L. New method of creating through silicon vias for next generation packaging techniques[C]// 2024 IEEE 74th Electronic Components and Technology Conference (ECTC), Denver, CO, USA, 2024. [2] ZHAO Z B, BAO X E, WANG Z Y, et al. Design of a low-pass filter based on the through-silicon-via structure[C]// 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Qingdao, China, 2023: 1-3. [3] KIM H, PARK J, LEE S, et al. Signal integrity analysis of through-silicon-via (TSV) with passive equalizer to separate return path and mitigate the inter-symbol interference (ISI) for next generation high bandwidth memory[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2023, 13(12): 1973-1988. [4] SHIN K R, EILERT K. Lumped element high precision X-band bandpass filter with through silicon via (TSV) integrated passive device (IPD) technology[C]// 2021 IEEE Radio and Wireless Symposium (RWS), San Diego, CA, USA, 2021: 147-150. [5] HOU F, SHEN Y Z, LUAN H K, et al. Micropackaged compact switchable filters with high isolation in 3-D TSV-MEMS process[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2021, 11(4): 647-654. [6] SUN C H, SUN L G, LIN F J. An ultra-miniature W-band bandpass filter with ultra-stopband based on 3-D TSV technology[C]// 2023 Asia-Pacific Microwave Conference (APMC), Taipei, China, 2023: 823-825. [7] LEI X Q, DONG G, ZHOU Z Y. Accurate capacitance modeling of 3D capacitor based on coaxial through silicon via[C]// 2024 25th International Conference on Electronic Packaging Technology (ICEPT), Tianjin, China, 2024: 1-4. [8] 马书英, 付东之, 刘轶, 等. 硅通孔三维互连与集成技术[J]. 电子与封装, 2024, 24(6): 060109. [9] 张爱兵, 李洋, 姚昕, 等. 基于硅通孔互连的芯粒集成技术研究进展[J]. 电子与封装, 2024, 24(6): 060110. [10] FAN C H, LIU X X, LIU N, et al. Compact bandpass filters with low loss and TZs based on 1/n mode circle-SIW in through silicon vias (TSVs) technology[J]. IEEE Transactions on Microwave Theory and Techniques, 2024, 72(9): 5095-5105. [11] QU C B, ZHU Z M, EN Y F, et al. Area-efficient extended 3-D inductor based on TSV technology for RF applications[J]. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2021, 29(2): 287-296. [12] QIAN L B, SANG J F, XIA Y S, et al. Investigating on through glass via based RF passives for 3-D integration[J]. IEEE Journal of the Electron Devices Society, 2018, 6: 755-759. [13] LI W L, ZHANG J H, WANG L Y, et al. Layout optimization of integrated inductors and capacitors using TGV technology[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2024, 14(1): 106-113. [14] WANG L Y, CHEN H W, LI W L, et al. Slow-wave substrate integrated waveguide with low loss and miniaturized dimensions using TGV technology[J]. IEEE Electron Device Letters, 2024, 45(4): 681-684. [15] 喻甜, 陈新, 林景裕, 等. 玻璃通孔技术的射频集成应用研究进展[J]. 电子与封装, 2025, 25(7): 070101. [16] 刘晓贤, 廖立航, 朱樟明. 基于玻璃通孔互连技术的集成无源器件发展[J]. 电子与封装, 2025, 25(7): 070104. [17] HORIUCHI K, ONO M, SATO Y, et al. Development of through glass vias (TGV) and through quartz vias (TQV) for advanced packaging[C]// 2017 International Conference on Electronics Packaging (ICEP), Yamagata, Japan, 2017: 434-438. [18] SATO Y, KIDERA N. Demonstration of 28GHz band pass filter toward 5G using ultra low loss and high accuracy through quartz vias[C]// 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), San Diego, CA, USA, 2018: 2243-2247. [19] EJIRI Y, SAKAMOTO M, SHIMIZU C, et al. Conductive Cu paste as a via filling material for through glass via (TGV)[C]// 2025 Pan Pacific Strategic Electronics Symposium (Pan Pacific), Maui, HI, USA, 2025. [20] 朱樟明, 尹湘坤, 刘晓贤, 等. 硅基三维集成射频无源器件及电路研究进展[J]. 微电子学与计算机, 2023, 40(1): 11-17. [21] MA X Y, YIN X K, WANG F J, et al. Silicon-based integrated RF filter with 3D coupled pole based on through-silicon via technology[C]// 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Chengdu, China, 2023: 1-3. [22] LYU S Q, YIN X K. Compact quad-band filter with bridged-T coil based on through-silicon vias technology[C]// 2023 6th International Conference on Electronics Technology (ICET), Chengdu, China, 2023: 438-441. [23] YIN X K, WANG F J, LU Q J, et al. A miniatured passive low-pass filter with ultrawide stopband based on 3-D integration technology[J]. IEEE Microwave and Wireless Components Letters, 2022, 32(1): 29-32. [24] WANG F J, ZHANG K, YIN X K, et al. A miniaturized wideband SIR interdigital bandpass filter with high performance based on TSV technology for W-band application[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2023, 13(6): 906-909. [25] WANG F J, HOU C C, YIN X K, et al. A compact sixth-order common-mode noise suppression filter based on 3-D integration technology[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2023, 13(4): 502-510. [26] LIU X X, ZHU Z M, YANG Y T, et al. Balanced SIW BPF based on through-glass vias[C]// 2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Shanghai, China, 2020: 1-3. [27] LI W L, WANG L Y, ZHANG J H, et al. SIW bandpass filter based on TGV technology for millimeter-wave wideband communications[C]// 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Chengdu, China, 2023: 1-3. [28] LI W L, ZHANG J H, GAO L B, et al. Compact TGV-based bandpass filters using integrated dual composite right/left-handed resonators[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2024, 71(4): 1939-1943. [29] FAN C H, LIU X X, ZHU Z M, et al. A substrate integrated waveguide filter based on quartz glass substrate with wide stop band[C]// 2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Harbin, China, 2022. [30] LIU N, LIU X X, LIU Y, et al. Compact interdigital bandpass filter, diplexer, and triplexer based on through quartz vias (TQVs)[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2022, 12(6): 988-997. [31] XIONG W, DONG G, ZHI C L, et al. Miniaturization strategy for directional couplers based on through-silicon via insertion and neuro-transfer function modeling method[J]. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2023, 31(11): 1653-1664. [32] DENG Y, WANG F J, YIN X K, et al. Ultracompact on-chip branch line coupler based on through-silicon via technology[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2025, 15(3): 623-626. [33] QIAN K F, QIAN L B, SANG J F, et al. Design of compact 3-D band-pass filters using through glass via technology[C]// 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi’an, China, 2019. [34] WU H D, DONG G, XIONG W, et al. Accurate magnetic coupling coefficient modeling of 3-D transformer based on TSV[J]. IEEE Microwave and Wireless Components Letters, 2022, 32(12): 1419-1422. [35] WANG F J, REN R N, YIN X K, et al. A transformer with high coupling coefficient and small area based on TSV[J]. Integration, the VLSI Journal, 2021, 81(C): 211-220. [36] DENG Y, WANG F J, YIN X K, et al. A high coupling coefficient and symmetric transformer based on TSV[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2025, 15(1): 165-172. [37] WANG F J, ZHANG D X, YIN X K, et al. A fully symmetric high-performance transformer balun based on TSV for RF applications[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2023, 13(7): 1074-1077.
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