关键词: 半导体, 缺陷, 电荷积累, 铜损伤

Abstract: With the development of large-scale integrated circuit technology, the semiconductor integrated circuit industry has received increasing attention from people. Under the influence of Moore's Law, integrated circuit technology has made great progress. However, with the introduction of low dielectric constant materials, while improving the performance of electronic devices, it also poses a serious challenge to defect management in manufacturing processes. Some mcroscopic defects may cause the loss of electronic device functions on the wafer, and even the entire wafer may be scrapped. Although charge management in manufacturing processes has become increasingly mature in charge management during the manufacturing process, defects still occur due to charge accumulation issues. Focusing on the issue of charge accumulation in the manufacturing process of chemical vapor deposition low-dielectric-constant dielectric films, through experimental design and failure analysis methods, we verified the charge accumulation generated during the manufacturing process of low-dielectric-constant dielectric films, leading to a failure model of copper damage defects in subsequent metal layer processes. The main reason is that after the manufacturing process of low dielectric constant film, the charge accumulation is not fully released between dry etching and wet cleaning processes. Based on the research results of the related experiments, a solution to eliminate defects is proposed, ultimately achieving yield improvement, avoiding large-scale wafer scrap, and maintaining stable mass production on the production line.

Key words: semiconductor, defect, charge accumulation, copper damage