关键词: 硅外延, 表面粗糙度, 生长温度, 生长速率, 生长主氢

Abstract: The wafer surface roughness was rapidly quantified using a particle counter (SP1), and the validity of the SP1 method was confirmed through linear fitting verification with Atomic Force Microscopy (AFM) test results. Using (111) 4° off-axis silicon epitaxial wafers as the research subject and under controlled conditions of consistent epitaxial layer thickness and resistivity, the effects of main hydrogen flow, growth temperature, growth rate, and HCl polishing time on surface roughness were systematically investigated. The results indicate that as the main hydrogen flow increases and the HCl polishing time extends, the surface roughness first decreases and then increases. Increasing the growth temperature or reducing the growth rate both contribute to a reduction in surface roughness. The study reveals the physical mechanisms by which various process parameters influence surface roughness, providing a theoretical basis and practical guidance for optimizing silicon epitaxial processes and improving surface quality.

Key words: silicon epitaxy, surface roughness, growth temperature, growth rate, grow main hydrogen