电子元器件低温焊接技术的研究进展

doi:10.16257/j.cnki.1681-1070.2022.0902

摘要/Abstract

摘要： 低温焊接技术是实现电子元器件多级封装和高温服役的关键技术之一。针对高可靠电子元器件封装对于低温连接、高温服役的焊接技术的需求，从材料制备工艺、焊料熔点变化和焊接工艺技术等方面对纳米金属颗粒低温烧结、瞬时液相低温烧结和颗粒增强低温焊接（烧结）工艺进行了综述。纳米金属颗粒低温烧结工艺形成的焊点稳定服役温度高于300℃，其制备复杂，烧结工艺对焊膏的依赖性较强，进一步优化焊料配方及其烧结工艺为其主流研究方向。瞬时液相低温烧结工艺，通过形成高熔点金属间化合物焊点提高其耐高温性能，其内部组分及耐高温性能对焊接工艺依赖性较强，明确焊点组分以及耐高温性能、焊接工艺为其主流研究方向。颗粒增强低温焊接（烧结）工艺，通过形成高温富集相与金属间化合物提升熔点，回流焊后熔点提升较小，明确其熔点与组分的变化规律为其研究重点。

关键词: 低温焊接技术, 纳米金属颗粒低温烧结, 瞬时液相低温烧结, 颗粒增强低温焊接

Abstract: Low temperature welding technology is one of the key technologies to realize multistage packaging and high temperature service of electronic components. According to the requirements of welding technology for low-temperature connection and high-temperature service in high reliable electronic component packaging, low temperature sintering of nano-metal particles, instantaneous liquid phase low temperature sintering and particle reinforced low temperature welding (sintering) are reviewed from the aspects of material preparation process, solder melting point change and welding process technology. Low temperature sintering process of nano-metal particles, forming solder joint stable service temperature is higher than 300 ℃. Its preparation is complex, and the sintering process is highly dependent on the solder. Further optimizing of the solder formula and sintering process is the mainstream of research. Transient liquid phase low-temperature sintering process can improve its high-temperature resistance by forming high melting point intermetallic compound solder joints. Its internal components and high-temperature resistance are strongly dependent on the welding process, and it is the mainstream of its research to clarify the solder joint components, high temperature resistance properties and welding process. The particle reinforced low-temperature welding (sintering) process can improve the melting point by forming high-temperature enriched phase and intermetallic compound, and the melting point after reflow welding is small. The research focus is to clarify the change law of its melting point and composition.

Key words: low temperature welding, lowtemperature sintering of nano-metal particles, instantaneous liquid phase sinteringat low temperature, particle reinforced low temperature welding

中图分类号:

王佳星, 姚全斌, 林鹏荣, 黄颖卓, 樊帆, 谢晓辰. 电子元器件低温焊接技术的研究进展[J]. 电子与封装, 2022, 22(9): 090202 .

WANG Jiaxing, YAO Quanbin, LIN Pengrong, HUANG Yingzhuo, FAN Fan, XIE Xiaochen. Research Progress of Low Temperature Welding Technology for Electronic Components[J]. Electronics & Packaging, 2022, 22(9): 090202 .

参考文献

[1] ZHANG Z Y, CALATA J N, LU G Q, et al, Nanoscale silver sintering for high-temperature packaging of semiconductor devices[J]. MPMD Fifth Global Innovations Proceedings, 2004:129-135.
[2] SCHEUERMANN U, WIEDL P. Low temperature joining technology-a high reliability alternative to solder contacts [C]//Workshop on Metal Ceramic Materials for Functional Applications, 1997.
[3] HERRING C. Effect of change of scale on sintering phenomena[J]. Journal of Applied Physics, 1950, 21(4): 301-303.
[4] LU G Q, CALATA J N, ZHANG Z, et al. A lead-Free, Low-temperature sintering die attach technique for high-performance and high-temperature packaging[C]//IEEE Cpmt Conference on High Density Microsystem Design & Packaging & Component Failure Analysis. IEEE, 2004:42-46.
[5] WANG S, JI H J, LI M Y, et al. Fabrication of interconnects using pressureless low temperature sintered Ag nanoparticles[J]. Materials Letters, 2012, 85:61-63.
[6] BAI G. Low-temperature sintering of nanoscale silver paste for semiconductor device interconnection[D]. Virginia Polytechnic Institute and State University, 2005.
[7] TOBITA M, YASUDA Y, IDE E, et al. Optimal design of coating material for nanoparticles and its application for low-temperature interconnection[J]. Journal of nanoparticle research: An interdisciplinary forum for nanoscale science and technology, 2010, 12(6):2135-2144.
[8] 肖勇. 复合纳米银颗粒低温烧结机理及其性能研究[D]. 哈尔滨：哈尔滨工业大学，2016.
[9] JUNG K H, MIN K D, LEE C J, et al. Effect of epoxy content in Ag nanoparticle paste on the bonding strength of MLCC packages[J]. Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials, 2019, 495(30):143487.
[10] SCHWARZBAUER H, KUHNERT R. Novel large area jointing technique for improved power device performance[J]. IEEE Transactions on Industry Applications, 1991, 27(1):93-95.
[11] ZHANG Z Y, LU G Q. Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow[J]. IEEE Transactions on Electronics Packaging Manufacturing, 2002, 25(4):279-283.
[12] 杨帆. 低温烧结纳米银焊点互连行为及可靠性研究[D]. 哈尔滨：哈尔滨工业大学，2021.
[13] 陈轼. 纳米银180 ℃烧结互连机理及可靠性研究[D]. 天津：天津大学，2022.
[14] YAN J F, ZOU G S, HU A M, et al. Preparation of PVP coated Cu NPs and the application for low-temperature bonding[J]. Journal of Materials Chemistry, 2011, 21(40):15981-15986.
[15] KOBAYASHI Y, SHIROCHI T, YASUDA Y, et al. Metal-metal bonding process using metallic copper nanoparticles prepared in aqueous solution[J]. International Journal of Adhesion and Adhesives, 2012, 33:50-55.
[16] 刘敬东. 铜纳米颗粒合成及其低温烧结互连行为研究[D]. 哈尔滨：哈尔滨工业大学，2017.
[17] SATOH T, ISHIZAKI T. Enhanced pressure-free bonding using mixture of Cu and NiO nanoparticles[J]. Journal of Alloys and Compounds, 2015, 629:118-123.
[18] YAMAKAWA T, TAKEMOTO T, SHIMODA M, et al. Influence of joining conditions on bonding strength of joints: efficacy of low-temperature bonding using Cu nanoparticle Paste[J]. Journal of Electronic Materials, 2013, 42(6): 1260-267.
[19] 吴雪. 用于功率芯片互连的高性能无压烧结纳米铜膏制备与制程工艺优化[D]. 广州：华南理工大学,2020.
[20] BERNSTEIN L. Semiconductor joining by the solid-liquid interdiffusion (SLID) process I. The systems Ag-In, Au-In, and Cu-In[J]. Journal of The Electrochemical Society, 1966, 113(12):1282-1288.
[21] SUN L, CHEN M H, ZHANG L, et al. Recent progress in SLID bonding in novel 3D-IC technologies[J]. Journal of Alloys and Compounds, 2019, 818:152825.
[22] 王宁. 三维封装芯片Cu-In体系固液互扩散低温键合机理研究[D]. 哈尔滨：哈尔滨工业大学，2012.
[23] SOMMADOSSI S, LITYNSKA L, ZIEBA P, et al. Transmission electron microscopy investigation of the microstructure and chemistry of Si/Cu/In/Cu/Si interconnections[J]. Materials Chemistry and Physics, 2003, 81(2): 566-568.
[24] LEE C K, YU A B, YAN L L, et al. Characterization of intermediate In/Ag layers of low temperature fluxless solder based wafer bonding for MEMS packaging[J]. Sensor and Actuators A, 2009, 154:85-91.
[25] 杨东升. 三维封装芯片固液互扩散低温键合机理研究[D]. 哈尔滨：哈尔滨工业大学，2011.
[26] YAO P, LI X, LIANG X, et al. A study on interfacial phase evolution during Cu/Sn/Cu soldering with a micro interconnected height[J]. MATERIALS CHARACTERIZATION, 2017,131:49-63.
[27] 冯洪亮. Ni-Sn TLPS连接特性与动力学研究[D]. 北京：北京科技大学，2018.
[28] GOLLAS B, ALBERING J H, SCHMUT K, et al. Thin layer in situ XRD of electrodeposited Ag/Sn and Ag/In for low-temperature isothermal diffusion soldering[J]. Intermetallics, 2008, 16(8):962-968.
[29] AASMUNDTVEIT K E, LUU T T, NGUYEN H V, et al. Solid-liquid inter Diffusion (SLID) Bonding, for thermally challenging applications[C]//Electronic Components and Technology Conference, 2019:141-149.
[30] CAO Y, NING W, LUO L. Wafer-level package with simultaneous TSV connection and cavity hermetic sealing by solder bonding for MEMS device[J]. IEEE Transactions on Electronics Packaging Manufacturing, 2009, 32(3):125-132.
[31] 郭福. 无铅钎焊技术与应用[M]. 北京：科学出版社，2006.
[32] CHOI S, BIELER T, LUCAS J P, et al. Characterization of the growth of intermetallic interfacial layers of Sn-Ag and Sn-Pb eutectic solders and heir composite solders on Cu substrate during isothermal long-term aging[J]. Journal of Electronic Materials, 1999, 28(11):1209-1215.
[33] TANG Y, LUO S M, HUANG W F, et al. Effects of Mn nanoparticles on tensile properties of low-Ag Sn-0.3Ag-0.7Cu-xMn solder alloys and joints[J]. Journal of Alloys and Compounds, 2017, 719: 365-375.
[34] MAVOORI H, JIN S. Significantly enhanced creep resistance in low-melting-point solders through nanoscale oxide dispersions[J]. Applied Physics Letters, 1998, 73(16):2290-2292.
[35] MARSHALL J L, CALDERON J, LUCEY G, et al. Composite solders[J]. Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, 1991.
[36] 朱颖. 锡铅稀土钎料 SMT 焊点热循环失效机制研究[D]. 哈尔滨：哈尔滨工业大学，1996.
[37] 马鑫. 微电子表面组装焊点失效的相关力学及金属学因素分析[D]. 哈尔滨：哈尔滨工业大学，2000.
[38] LIU Y, SUN F L, YAN T L, et al. Effects of Bi and Ni addition on wettability and melting point of Sn-0.3Ag-0.7Cu Low-Ag Pb-free solder[C]// 2008 International Conference on Electronic Packaging Technology & High Density Packaging. IEEE, 2008.
[39] 董昌慧，王凤江，丁海健，等. 微量Co的添加对Sn-Bi共晶钎料性能的影响[J]. 热加工工艺，2015，44(1)：190-192.
[40] 石成杰. 微米银/铜颗粒增强锡基钎料的研究[D]. 哈尔滨：哈尔滨工业大学，2020.
[41] MOKHTARI O, NISHIKAWA H. Transient liquid phase bonding of Sn–Bi solder with added Cu particles[J]. Journal of Materials Science Materials in Electronics, 2016, 27(5):1-13.
[42] LIN D C, LIU S, GUO T M. An investigation of nanoparticles addition on solidification kinetics and microstructure development of tin/lead solder[J]. Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 2003, 360:285-292.
[43] TSAO L C, CHANG S Y, LEE C I, et al. Effects of nano-Al2O3 additions on microstructure development and hardness of Sn3.5Ag0.5Cu solder[J]. Materials and Design, 2010, 31(10): 4831-4835.
[44] TSAO L C, CHANG S Y. Effects of nano-TiO2 additions on the thermal analysis, microstructure and tensile properties of Sn3.5Ag0.25Cu solder[J]. Materials and design, 2010, 31(2): 990-993.

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