半导体封装Cu-Cu互连接头烧结性能研究

doi:10.16257/j.cnki.1681-1070.2023.0068

电子与封装 ›› 2023, Vol. 23 ›› Issue (3): 030110 . doi: 10.16257/j.cnki.1681-1070.2023.0068

所属专题：先进三维封装与异质集成

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半导体封装Cu-Cu互连接头烧结性能研究

吴松;张昱;曹萍;杨冠南;黄光汉;崔成强

吴松，张昱，曹萍，等

收稿日期:2023-01-03 出版日期:2023-03-24 发布日期:2023-03-08
作者简介:吴松（1997—），男，江西上饶人，硕士，主要研究方向为微电子封装材料。

Study on Sintering Properties of Cu-Cu InterconnectJoint for Semiconductor Package

WU Song, ZHANG Yu, CAO Ping, YANG Guannan, HUANG Guanghan, CUI Chengqiang

StateKey Laboratory of Precision Electronic Manufacturing Technology and Equipment,Guangdong University of Technology, Guangzhou 510006, China

Received:2023-01-03 Online:2023-03-24 Published:2023-03-08

摘要/Abstract

摘要： 使用不添加任何助焊剂的铜膏，获得了高烧结性能的Cu-Cu互连接头。使用扫描电子显微镜、X射线衍射仪和热重分析仪对粒径分别为（20±10）nm、（80±20）nm和（100±20）nm的纳米铜颗粒分析表征。选择粒径为（80±20）nm的纳米铜颗粒和松油醇混合配成纳米铜膏，用于互连接头的烧结性能研究。探究了不同的烧结温度、保温时间、升温速率和烧结压力对互连接头的剪切强度和失效面微观形貌的影响，得出了最佳的工艺参数。在升温速率为0.1 ℃/s、保温时间为30 min、烧结温度为260℃和无压条件下烧结，互连接头的剪切强度达到了5 MPa。在同样的升温速率和保温时间，同时烧结温度为300 ℃、压力为5.0 MPa的条件下烧结，互连接头的剪切强度达到了33.3 MPa。Cu-Cu互连接头能够满足功率半导体器件的互连应用要求。

关键词: 纳米铜颗粒, 微电子封装, Cu-Cu互连接头, 低温烧结

Abstract: Cu-Cu interconnection joints with high sintering properties were obtained by using copper paste without adding any flux. Scanning electron microscope, X-ray diffractometer and thermogravimetric analyzer were used to analyze and characterize copper nanoparticles with particle size of (20±10) nm, (80±20) nm and (100±20) nm respectively. Copper nanoparticles with particle size of (80±20) nm were mixed with terpineol to prepare paste for the study of sintering properties of interconnection joints. The effects of different sintering temperature, holding time, heating rate and sintering pressure on the shear strength and failure surface morphology of interconnection joints were investigated, and the optimal process parameters were obtained. Under the conditions of 0.1 ℃/s heating rate, 30 min holding time, 260 ℃ sintering temperature and no pressure, the shear strength of the interconnection joint reached 5.0 MPa. At the same heating rate and holding time, the shear strength of the interconnection joint reached 33.3 MPa at the sintering temperature of 300℃ and pressure of 5 MPa. Cu-Cu interconnection joint can meet the interconnection application requirements of power semiconductor devices.

Key words: Cu nanoparticles, microelectronic packaging, Cu-Cu interconnection joint, low temperature sintering

中图分类号:

TN305.94

吴松, 张昱, 曹萍, 杨冠南, 黄光汉, 崔成强. 半导体封装Cu-Cu互连接头烧结性能研究[J]. 电子与封装, 2023, 23(3): 030110 .

WU Song, ZHANG Yu, CAO Ping, YANG Guannan, HUANG Guanghan, CUI Chengqiang. Study on Sintering Properties of Cu-Cu InterconnectJoint for Semiconductor Package[J]. Electronics & Packaging, 2023, 23(3): 030110 .

参考文献

[1] ROCCAFORTE F, GIANNAZZO F, IUCOLANO F, et al. Surface and interface issues in wide band gap semiconductor electronics[J]. Applied Surface Science, 2010, 256(19): 5727-5735.
[2] CHIN H S, CHEONG K Y, ISMAIL A B. A review on die attach materials for SiC-based high-temperature power devices[J]. Metallurgical and Materials Transactions, B. Process Metallurgy and Materials Processing Science, 2010, 41(4): 824-832.
[3] ELASSER A, CHOW T P. Silicon carbide benefits and advantages for power electronics circuits and systems[J]. Proceedings of the IEEE, 2002, 90(6): 969-986.
[4] BUTTAY C, PLANSON D, ALLARD B, et al. State of the art of high temperature power electronics[J]. Materials Science and Engineering: B, 2011, 176(4): 283-288.
[5] RHEE D M, HUANG H Y, AW J, et al. High Power SiC inverter module packaging solutions for junction temperature over 220 ℃[C]// 2014 IEEE 16th Electronics Packaging Technology Conference (Eptc), Singapore, 2014: 31-35.
[6] JEONG H, MIN K D, LEE C J, et al. Mechanical reliability of Cu cored solder ball in flip chip package under thermal shock test[J]. Microelectron Reliability, 2020: 113918.
[7] LI J J, YU X, SHI T L, et al. Low-temperature and low-pressure Cu-Cu bonding by highly sinterable Cu nanoparticle paste[J]. Nanoscale Res Lett, 2017, 12(1): 255.
[8] LIU C M, LIN H W, CHU Y C, et al. Low-temperature direct copper-to-copper bonding enabled by creep on highly (111)-oriented Cu surfaces[J]. Scripta Materialia, 2014, 78-79: 65-68.
[9] KHAZAKA R, MENDIZABAL L, HENRY D. Review on joint shear strength of nano-silver paste and its long-term high temperature reliability[J]. Journal of Electronic Materials, 2014, 43(7): 2459-2466.
[10] KIM M S, NISHIKAWAA H. Silver nanoporous sheet for solid-state die attach in power device packaging[J]. Scripta materialia, 2014, 92: 43-46.
[11] GAO R H, HE S L, LI J H, et al. Interfacial transformation of preoxidized Cu microparticles in a formic-acid atmosphere for pressureless Cu-Cu bonding[J]. Journal of Materials Science. Materials in Electronics, 2020, 31(17): 14635-14644.
[12] LI J J, CHENG C L, SHI T L, et al. Surface effect induced Cu-Cu bonding by Cu nanosolder paste[J]. Materials Letters, 2016, 184: 193-196.
[13] ZUO Y, SHEN J, HU Y D, et al. Improvement of oxidation resistance and bonding strength of Cu nanoparticles solder joints of Cu-Cu bonding by phosphating the nanoparticle[J]. Journal of Materials Processing Technology, 2018, 253: 27-33.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

半导体封装Cu-Cu互连接头烧结性能研究

Study on Sintering Properties of Cu-Cu InterconnectJoint for Semiconductor Package

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