大气中子及α粒子对芯片软错误的贡献趋势*

doi:10.16257/j.cnki.1681-1070.2023.0103

摘要/Abstract

摘要： 在先进工艺集成电路中，高能中子、热中子和α粒子造成的软错误愈发受到关注。研究了150 nm至16 nmFinFET工艺节点器件在大气环境中的单粒子效应。随着工艺节点的缩小，高能中子引起的单粒子翻转截面和软错误率整体上均呈下降趋势。高能中子引起的软错误率在各个节点中均占据主导地位。热中子在45 nm工艺节点下对软错误率有明显贡献，由其与W塞中所包含的¹⁰B核反应引起。α粒子在先进器件中的贡献整体出现下降趋势，在40 nm工艺节点下出现极小值。此外，16 nm工艺节点下FinFET结构的引入使集成电路的软错误率下降了一个数量级。

关键词: 单粒子效应, 中子, 热中子, α粒子, FinFET

Abstract: In advanced process integrated circuits, soft errors caused by high-energy neutrons, thermal neutrons and α particles are gaining increasing attention. Single event effects of 150 nm to 16 nm FinFET devices in atmospheric environments are investigated. The single event flip cross section and soft error rate caused by high-energy neutrons both decrease with the shrinkage of the process node. High-energy neutrons dominate the soft error rate in each node. Thermal neutrons contributed significantly to the soft error rate at the 45 nm process due to its nuclear reaction with ¹⁰B in W plug. The contribution of α particles in advanced devices shows an overall downward trend, with minimal values at 40 nm. In addition, the introduction of the FinFET structure at 16 nm node reduces the soft error rate of the integrated circuit by an order of magnitude.

Key words: single event effect, neutron, thermal neutron, α particle, FinFET

中图分类号:

TN306

余淇睿, 张战刚, 李斌, 吴朝晖, 雷志锋, 彭超. 大气中子及α粒子对芯片软错误的贡献趋势^*[J]. 电子与封装, 2023, 23(8): 080401 .

YU Qirui, ZHANG Zhan’gang, LI Bin, WU Zhaohui, LEI Zhifeng, PENG Chao. Contribution of Atmospheric Neutrons and α Particles to the Soft Errors of Integrated Circuits[J]. Electronics & Packaging, 2023, 23(8): 080401 .

参考文献

[1] BINDER D, SMITH E C, HOLMAN A B. Satellite anomalies from galactic cosmic rays[J]. IEEE Transactions on Nuclear Science, 1975, 22(6): 2675-2680.
[2] EDWARDS R, DYER C, NORMAND E. Technical standard for atmospheric radiation single event effects, (SEE) on avionics electronics[C]//2004 IEEE Radiation Effects Data Workshop, Atlanta, GA USA, 2004:1-5.
[3] OLSEN J, BECHER P E, FYNBO P B, et al. Neutron-induced single event upsets in static RAMS observed a 10 km flight attitude[J]. IEEE Transactions on Nuclear Science, 1993, 40(2): 74-77.
[4] TABER A, NORMAND E. Single event upset in avionics[J]. IEEE Transactions on Nuclear Science, 1993, 40(2): 120-126.
[5] 杨善潮, 齐超, 刘岩, 等. 中子单粒子效应研究现状及进展[J]. 强激光与粒子束, 2015, 27(11): 110201.
[6] DYER C, LEI F. Monte Carlo calculations of the influence on aircraft radiation environments of structures and solar particle events[J]. IEEE Transactions on Nuclear Science, 2001, 48(6): 1987-1995.
[7] BAUMANN R C. Soft errors in advanced semiconductor devices-part I: the three radiation sources[J]. IEEE Transactions on Device and Materials Reliability, 2001, 1(1): 17-22.
[8] Autran J L, Munteanu D, Roche P, et al. Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level[J]. Microelectronics Reliability, 2010, 50(9-11): 1822-1831.
[9] AUTRAN J L, ROCHE P, SAUZE S, et al. Altitude and underground real-time SER characterization of CMOS 65 nm SRAM[J]. IEEE Transactions on Nuclear Science, 2009, 56(4): 2258-2266.
[10] 张战刚, 叶兵, 姬庆刚, 等. 纳米级静态随机存取存储器的α粒子软错误机理研究[J]. 物理学报, 2020, 69(13): 201-209.
[11] Xilinx. Device reliability report [EB/OL]. [2022-5-30]. https://docs.xilinx.com/v/u/en-US/ug116.
[12] LESEA A, DRIMER S, FABULA J J, et al. The Rosetta experiment: Atmospheric soft error rate testing in differing technology FPGAs[J]. IEEE Transactions on Device and Materials Reliability, 2005, 5(3): 317-328.
[13] 谢文虎, 郑天池, 季振凯, 等. 基于亿门级UltraScale+架构FPGA的单粒子效应测试方法[J]. 电子与封装, 2022, 22(7): 070202.
[14] NSENGIYUMVA P, MASSENGILL L W, ALLES M L, et al. Analysis of bulk FinFET structural effects on single-event cross sections[J]. IEEE Transactions on Nuclear Science, 2017, 64(1): 441-448.
[15] EL-MAMOUNI F, ZHANG E X, PATE N D, et al. Laser- and heavy ion-induced charge collection in bulk FinFETs[J]. IEEE Transactions on Nuclear Science, 2011, 58(6): 2563-2569.
[16] 刘保军, 杨晓阔, 陈名华. 4H-SiC基FinFET器件的单粒子瞬态效应研究[J]. 电子与封装, 2022, 22(11): 110401.
[17] QIN J R, CHEN S M, CHEN J J. 3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET[J]. 中国科学(技术科学英文版), 2012(6): 1576-1580.
[18] FANG Y P, OATES A S. Neutron-induced charge collection simulation of bulk FinFET SRAMs compared with conventional planar SRAMs[J]. IEEE Transactions on Device and Materials Reliability, 2011, 11(4): 551-554.
[19] GORDON M S, GOLDHAGEN P, RODBELL K P, et al. Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground[J]. IEEE Transactions on Nuclear Science, 2004, 51(6): 3427-3434.
[20] SERRE S, SEMIKH S, UZNANSKI S, et al. Geant4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate[J]. IEEE Transactions on Nuclear Science, 2012, 59(4): 714-722.
[21] 张战刚, 雷志锋, 童腾, 等. 14 nm FinFET和65 nm平面工艺静态随机存取存储器中子单粒子翻转对比[J]. 物理学报, 2020, 69(5): 056101.
[22] HSIEH C M, MURLEY P C, O'BRIEN R R. A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices[J]. IEEE Electron Device Letters, 1981, 2(4): 103-105.
[23] 贺朝会, 李国政, 罗晋生, 等. CMOS SRAM单粒子翻转效应的解析分析[J]. 半导体学报(英文版), 2000, 21(2): 174-178.
[24] CANNON E H, REINHARDT D D, GORDON M S, et al. SRAM SER in 90, 130 and 180 nm bulk and SOI technologies[C]// 2004 IEEE International Reliability Physics Symposium, Phoenix, AZ USA, 2004: 300-304.
[25] 何安林, 郭刚, 陈力, 等. 65 nm 工艺 SRAM 低能质子单粒子翻转实验研究[J]. 原子能科学技术, 2014, 48(12): 2364-2369.
[26] Xilinx. Balancing cost, power, and performance for I/O connectivity[EB/OL]. [2023-3-23]. https://china.xilinx.com/content/dam/xilinx/support/documents/product-briefs/spartan6-lowcost-product-brief.pdf.
[27] Xilinx. Power vs. performance: The 90 nm inflection point[EB/OL]. [2023-3-23]. https://docs.xilinx.com/v/u/en-US/wp223.
[28] Xilinx. Virtex-6 family overview[EB/OL]. [2023-3-23]. https://docs.xilinx.com/v/u/en-US/ds150.
[29] Xilinx. The Xilinx Virtex-7 FPGA family: Unleashing performance and innovation with high-density, low-power 28 nm technology[EB/OL]. [2023-3-23]. https://china.xilinx.com/content/dam/xilinx/support/documents/product-briefs/virtex7-product-brief.pdf.
[30] SAXENA P K, BHAT N. SEU reliability improvement due to source-side charge collection in the deep-submicron SRAM cell[J]. IEEE Transactions on Device and Materials Reliability, 2003, 3(1): 14-17.
[31] 王强, 姜斌, 邓宏, 等. VLSI工艺中BPSG薄膜的研究[J]. 电子元件与材料, 2005, 24(1): 53-56.
[32] 胡志良, 杨卫涛, 李永宏, 等. 应用中国散裂中子源9号束线端研究65 nm微控制器大气中子单粒子效应[J]. 物理学报, 2019, 68(23): 307-313.
[33] WARREN K M, WELLER R A, MENDENHALL M H, et al. The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM[J]. IEEE Transactions on Nuclear Science, 2005, 52(6): 2125-2131.
[34] WEN S J, WONG R, ROMAIN M, et al. Thermal neutron soft error rate for SRAMS in the 90 nm-45 nm technology range[C]// 2010 IEEE International Reliability Physics Symposium, Anaheim, CA USA, 2010: 1036-1039.
[35] BAUMANN R C, SMITH E B. Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices[C]// 2000 IEEE International Reliability Physics Symposium, San Jose, CA USA, 2002: 152-157.
[36] Dubey A, Dubey M, Thakur S, et al. An approach to mitigate 10B generated soft error inSRAM[J]. International Journal of Engineering Research and Applications, 2012, 2(3): 1843-1849.
[37] WROBEL F, GASIOT J, SAIGNé F, et al. Effects of atmospheric neutrons and natural contamination onadvanced microelectronic memories[J]. Applied Physics Letters, 2008, 93(6): 064105.
[38] WROBEL F, GASIOT J, SAIGNE F. Hafnium and uranium contributions to soft error rate at ground level[J]. IEEE Transactions on Nuclear Science, 2008, 55(6): 3141-3145.
[39] WROBEL F, SAIGNE F, GEDION M, et al. Radioactive nuclei induced soft errors at ground level[J]. IEEE Transactions on Nuclear Science, 2009, 56(6): 3437-3441.
[40] KEREN E, GREENBERG S, YITZHAK N M, et al. Characterization and mitigation of single-event transients in Xilinx 45-nm SRAM-based FPGA[J]. IEEE Transactions on Nuclear Science, 2019, 66(6): 946-954.
[41] GEDION M, WROBEL F, SAIGNé F, et al. Monte Carlo simulations to evaluate the contribution of Si bulk, interconnects, and packaging to alpha-soft error rates in advanced technologies[J]. IEEE Transactions on Nuclear Science, 2010, 57(6): 3121-3126.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

大气中子及α粒子对芯片软错误的贡献趋势^*

Contribution of Atmospheric Neutrons and α Particles to the Soft Errors of Integrated Circuits

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 14

编辑推荐

Metrics

本文评价

[1]	赵正平. FinFET/GAAFET/CFET纳电子学的研究进展[J]. 电子与封装, 2024, 24(8): 80401-.
[2]	翟培卓;王印权;徐何军;郑若成;朱少立. 碳纳米管场效应晶体管重离子单粒子效应研究[J]. 电子与封装, 2024, 24(1): 10401-.
[3]	陈锡鑫;殷亚楠;高熠;郭刚;陈启明. 65 nm工艺SRAM中能质子单粒子效应研究[J]. 电子与封装, 2023, 23(7): 70403-.
[4]	季振凯,杨茂林,于治. 基于16 nm FinFET工艺FPGA的低功耗PCIe Gen3性能研究[J]. 电子与封装, 2023, 23(11): 110204-.
[5]	谢文虎;郑天池;季振凯;杨茂林. 基于亿门级UltraScale+架构FPGA的单粒子效应测试方法[J]. 电子与封装, 2022, 22(7): 70202-.
[6]	李欢;顾小明;徐晴昊. 抗辐射LDO单粒子效应的测控系统设计与实现[J]. 电子与封装, 2022, 22(11): 110302-.
[7]	刘保军;杨晓阔;陈名华. 4H-SiC基FinFET器件的单粒子瞬态效应研究^*[J]. 电子与封装, 2022, 22(11): 110401-.
[8]	张景波;朱亚男;彭春雨;赵强. 高可靠性的读写分离14T存储单元设计*[J]. 电子与封装, 2022, 22(1): 10303-.
[9]	陈鑫;施聿哲;白雨鑫;陈凯;张智维;张颖. 单粒子翻转效应的FPGA模拟技术^*[J]. 电子与封装, 2021, 21(9): 90402-.
[10]	陈嘉鹏;何威;王威. 一种用于数字电路单粒子效应试验的系统设计[J]. 电子与封装, 2020, 20(11): 110304-.
[11]	金鑫，唐民，于庆奎，张洪伟，梅博，孙毅，唐路平. 粒子入射条件对28 nm SRAM 单元单粒子电荷共享效应影响的TCAD 仿真研究[J]. 电子与封装, 2019, 19(6): 32-40.
[12]	周昕杰，陈　瑶，花正勇，殷亚楠，郭　刚，蔡　丽. TCAD结合SPICE的单粒子效应仿真方法[J]. 电子与封装, 2019, 19(4): 32-35.
[13]	余洋，乔明. 一种SOILDMOS器件辐射效应仿真研究[J]. 电子与封装, 2018, 18(7): 32-34.
[14]	米　丹，左玲玲. 体硅CMOS集成电路抗辐射加固设计技术[J]. 电子与封装, 2016, 16(9): 40-43.