中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2019, Vol. 19 ›› Issue (3): 038 -40. doi: 10.16257/j.cnki.1681-1070.2019.0033

• 微电子制造与可靠性 • 上一篇    下一篇

深亚微米多晶硅熔丝特性研究

张猛华,王燕婷,张 继   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡 214072
  • 出版日期:2019-03-20 发布日期:2020-01-16
  • 作者简介:张猛华(1979—),男,江苏阜宁人,硕士,高级工程师,中国电子科技集团公司公司第五十八研究所DSP/MCU领域设计高级专家,江苏省333高层次人才。

Study on the Properties of Deep Submicron Poly-Fuses

ZHANG Menghua, WANG Yanting, ZHANG Ji   

  1. China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214072, China
  • Online:2019-03-20 Published:2020-01-16

摘要: 随着集成电路产业的迅速发展,熔丝电路在IC芯片中的应用越来越广泛。为了提高集成电路制造良率,在集成电路设计中通常会大量使用基于熔丝技术的冗余电路。通过对180 nm工艺多晶硅熔丝熔断特性的探索和研究,给出多种尺寸的多晶硅熔丝电熔断特征参考值,可以满足集成电路设计对编程条件和编程后熔丝阻值的不同需求。集成电路设计者通过选择不同的多晶硅熔丝尺寸种类,实现熔丝外围电压电流发生电路的灵活设计,大幅提高180 nm工艺多晶硅熔丝设计成功率。通过优化熔丝器件结构、编程条件等参数,实现不同应用需求的熔丝量产。

关键词: 熔丝;多晶熔丝;熔断;180 nm工艺

Abstract: With the rapid development of integrated circuit industry, fuse circuit is more and more widely used in IC chips. In order to improve the yield of IC manufacturing, fuse-based redundant circuits are often used in IC design. By exploring and studying the fusing characteristics of poly-fuses in 180nm process, the reference values of fusing characteristics of poly-fuses of various sizes are given, which can meet the different requirements of integrated circuit design for programming conditions and fuse resistance values after programming. By choosing different types of poly-fuse size, integrated circuit designers can flexibly design the voltage and current generator circuit around the fuse, and greatly improve the success rate of poly-fuse design in 180nm process. By optimizing the fuse device structure, programming conditions and other parameters to achieve different application requirements of fuse production.

Key words: fuse; poly-fuse; fusing; 180 nm process

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