粒子入射条件对28 nm SRAM 单元单粒子电荷共享效应影响的TCAD 仿真研究

doi:10.16257/j.cnki.1681-1070.2019.0609

电子与封装 ›› 2019, Vol. 19 ›› Issue (6): 032 -40. doi: 10.16257/j.cnki.1681-1070.2019.0609

粒子入射条件对28 nm SRAM 单元单粒子电荷共享效应影响的TCAD 仿真研究

金鑫¹，唐民¹，于庆奎¹，张洪伟¹，梅博¹，孙毅¹，唐路平²

1.中国空间技术研究院宇航物资保障事业部，北京 100029；2.国防科技大学，长沙 410073

收稿日期:2019-03-25 出版日期:2019-06-19 发布日期:2019-06-19
作者简介:金鑫(1993—)，男，河南南阳人，硕士研究生，研究方向为宇航元器件抗辐射技术。

TCAD Simulation Research on the Influence of Particle Incidence Conditions on Single Event Charge Sharing Effect of 28 nm SRAM

JIN Xin,TANG Min,YU Qingkui,ZHANG Hongwei,MEI Bo,SUN Yi,TANG Luping

1.Astronautical Material Support Department,China Academy of Space Technology,Beijing 100029,China；2.National University of Defense Technology,Changsha 410073,China

Received:2019-03-25 Online:2019-06-19 Published:2019-06-19

摘要/Abstract

摘要： 利用器件仿真工具TCAD，建立28 nm 体硅工艺器件的三维模型，研究了粒子入射条件和器件间距等因素对28 nm 体硅工艺器件单粒子效应电荷共享的影响规律。结果表明，粒子LET 值增大、入射角度的增大、器件间距的减小和浅槽隔离(STI)深度的减少都会增加相邻器件的电荷收集，增强电荷共享效应，影响器件敏感节点产生的瞬态电流大小；SRAM 单元内不同敏感节点的翻转阈值不同，粒子LET 值和入射角度的改变会对SRAM 单元的单粒子翻转造成影响；LET 值和粒子入射位置变化时，多个SRAM 单元发生的单粒子多位翻转的位数和位置也会变化。

关键词: 多位翻转, 器件仿真, 28 nm, 单粒子效应, 电荷共享, 多位翻转

Abstract: The three-dimensional model of 28 nm bulk silicon process device was established by using 3D TCAD simulation,and the influence of particle incidence conditions,device spacing and other factors on the single event effect charge sharing of 28 nm bulk silicon process device were studied.The results show that the LET value increasement of particles,the increase of incident Angle,the decrease of device spacing and the reduction of STI depth will increase the charge collection of adjacent devices,enhance the charge sharing effect,and affect the transient current generated by the sensitive nodes of devices.The flip threshold of different sensitive nodes in the SRAM cell is disparate,and the change of particle LET value and incident angle will affect the single event upset of the SRAM cell.When LET value and particle incidence position change,the number and position of multiple cells upset occurring in multiple SARM cells will also change.

Key words: device simulation, 28 nm, single event effect, charge collection, device simulation, multiple cells upset, 28 nm, single event effect, charge collection, multiple cells upset

中图分类号:

TN306

金鑫，唐民，于庆奎，张洪伟，梅博，孙毅，唐路平. 粒子入射条件对28 nm SRAM 单元单粒子电荷共享效应影响的TCAD 仿真研究[J]. 电子与封装, 2019, 19(6): 032 -40.

JIN Xin¹,TANG Min¹,YU Qingkui¹,ZHANG Hongwei¹,MEI Bo¹,SUN Yi¹,TANG Luping². TCAD Simulation Research on the Influence of Particle Incidence Conditions on Single Event Charge Sharing Effect of 28 nm SRAM[J]. Electronics & Packaging, 2019, 19(6): 032 -40.

参考文献

[1] HE Yibai, CHEN Shuming. Comparison of heavy-ion induced SEU for D-and TMR-flip-flop designs in 65-nm bulk CMOS technology[J]. Science China Information Sciences,2014,57(10):102405.
[2]WANG Z M,YAO Z B,GUO H X,et al.Bitstream decoding and SEU-induced failure analysis in SRAM-based FPGAs[J].Science China Information Sciences,2012,55(4):971-982.
[3]TRIPPE J M,REED R A,AUSTIN R A,et al.Predicting Muon- Induced SEU Rates for a 28-nm SRAM using protons and heavy ions to calibrate the sensitive volume model[J].IEEE Transactions on Nuclear Science,2018,65(2):712-718.
[4]MASSENGILL L W,BHUVA B L,HOLMAN W T,et al.Technology scaling and soft error reliability[C].Anaheim:2012 IEEE International Reliability Physics Symposium,2012:3C.1.1-3C.1.7.
[5]王天琦.影响纳米CMOS 器件单粒子效应电荷收集共享关键问题研究[D].哈尔滨：哈尔滨工业大学,2016.
[6]CHEN S Q,SHI L Q.Study on charge sharing and multiplebitupset[J].Nuclear Electronics&Detection Technology,2011,31(2):171-208.
[7]TONFAT J,KASTENSMIDT F L,ARTOLA L,et al.Analyzing the Influence of the angles of incidence and rotation on MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA[J]. IEEE Transactions on Nuclear Science,2017,64(8)：2161-2168.
[8]ZOU Sanyong.A SEU/MBU tolerant SRAM bit cell based on multi-input gate[C].IEEE 2017 4th International Conference on Electrical and Electronic Engineering(ICEEE),2017:251-255.
[9]Synopsys.TCAD Sentaurus User’s Manual[EB/OL].https://www.Synopsys.com/Tools/Tcad/Pages/Intro TCAD-Sentau rus.aspx.
[10]MORSINMB,AMRIEYMK.Designingandcharacterization of 60 nm p-well MOSFET using Sentaurus TCAD Software[C].Kuala Lumpur:2010 2nd International Conference on Electronic Computer Technology,2010.
[11]王健.基于TCAD 三维器件模型仿真的电荷共享效应研究[D].成都:电子科技大学,2015.
[12]李鹏.纳米级SRAM 单粒子翻转效应及其诱导的软错误研究[D].长沙:国防科学技术大学,2016.
[13]李册.纳米器件电荷共享效应研究[D].哈尔滨:黑龙江大学,2016.
[14]QIN J R,CHEN S M,LIANG B,et al.Recovery of single event upset in advanced complementary metal-oxide semiconductor static random access memory cells[J].Chinese Physics B,2012,21(2):029401.
[15]秦军瑞.纳米CMOS 集成电路单粒子诱导的脉冲窄化及电荷共享效应研究[D].长沙:国防科学技术大学,2013.
[16]逯中岳,周婉婷.基于TCAD 的SRAM 单粒子效应研究[J].半导体光电,2016,37(3):349-352.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

粒子入射条件对28 nm SRAM 单元单粒子电荷共享效应影响的TCAD 仿真研究

TCAD Simulation Research on the Influence of Particle Incidence Conditions on Single Event Charge Sharing Effect of 28 nm SRAM

RichHTML

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 11

编辑推荐

Metrics

本文评价

[1]	翟培卓;王印权;徐何军;郑若成;朱少立. 碳纳米管场效应晶体管重离子单粒子效应研究[J]. 电子与封装, 2024, 24(1): 10401-.
[2]	余淇睿, 张战刚, 李斌, 吴朝晖, 雷志锋, 彭超. 大气中子及α粒子对芯片软错误的贡献趋势^*[J]. 电子与封装, 2023, 23(8): 80401-.
[3]	陈锡鑫;殷亚楠;高熠;郭刚;陈启明. 65 nm工艺SRAM中能质子单粒子效应研究[J]. 电子与封装, 2023, 23(7): 70403-.
[4]	谢文虎;郑天池;季振凯;杨茂林. 基于亿门级UltraScale+架构FPGA的单粒子效应测试方法[J]. 电子与封装, 2022, 22(7): 70202-.
[5]	殷亚楠;王玧真;邱一武;周昕杰;郭刚. 纳米器件单粒子瞬态仿真研究^*[J]. 电子与封装, 2022, 22(7): 70404-.
[6]	李欢;顾小明;徐晴昊. 抗辐射LDO单粒子效应的测控系统设计与实现[J]. 电子与封装, 2022, 22(11): 110302-.
[7]	张景波;朱亚男;彭春雨;赵强. 高可靠性的读写分离14T存储单元设计*[J]. 电子与封装, 2022, 22(1): 10303-.
[8]	陈鑫;施聿哲;白雨鑫;陈凯;张智维;张颖. 单粒子翻转效应的FPGA模拟技术^*[J]. 电子与封装, 2021, 21(9): 90402-.
[9]	陈嘉鹏;何威;王威. 一种用于数字电路单粒子效应试验的系统设计[J]. 电子与封装, 2020, 20(11): 110304-.
[10]	周昕杰，陈　瑶，花正勇，殷亚楠，郭　刚，蔡　丽. TCAD结合SPICE的单粒子效应仿真方法[J]. 电子与封装, 2019, 19(4): 32-35.
[11]	米　丹，左玲玲. 体硅CMOS集成电路抗辐射加固设计技术[J]. 电子与封装, 2016, 16(9): 40-43.