关键词: 单粒子闩锁, TCAD, 加固, 重离子试验, 外延工艺

Abstract: The high-energy particles of large quantities from outer space may lead to Single Event Latch-up (SEL)in CMOS devices.The paper conducts studies on SEL for CMOS inverter using 0.18 μm CMOS technology and the TCAD method.The triggering mechanism of SEL is at first discussed for further analysis on particle incident position,voltage,temperature,distance between active region and body,NMOS and PMOS spacing,as well as radiation-hardened process.Then the optimal structure is obtained.The heavy ion test performed there after shows that in the 3.2 μm epitaxial process the SRAM circuit has a high LET threshold of 99.75 MeV·cm2/mg with L1=0.86 μm and L2=0.28 μm.

Key words: single event latch-up, TCAD, radiation-hardened, heavy ion test, epitaxial process