中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2016, Vol. 16 ›› Issue (7): 34 -38. doi: 10.16257/j.cnki.1681-1070.2016.0084

• 微电子制造与可靠性 • 上一篇    下一篇

L波段大功率开关的研制

孟向俊,杨 磊,黄贞松,宋 艳,许 庆   

  1. 南京电子器件研究所,南京211111
  • 收稿日期:2016-04-07 出版日期:2016-07-20 发布日期:2016-07-20
  • 作者简介:孟向俊(1990—),男,江苏东台人,2013年毕业于电子科技大学电子信息工程专业,获学士学位,现为南京电子器件研究所在读硕士研究生,主要从事射频与微波模块电路的研究。

Design of L-band Power Switch

MENG Xiangjun,YANG Lei,HUANG Zhensong,SONG Yan,XU Qing   

  1. Nanjing Electronic Device Institute,Nanjing 211111,China
  • Received:2016-04-07 Online:2016-07-20 Published:2016-07-20

摘要: 根据高功率、低插损、高隔离的要求,选择串并联电路形式对这些指标做折衷处理。采用多芯片模块组装工艺,把PIN管芯片通过焊料烧结在氮化铝基板上。相比于传统基板材料,氮化铝陶瓷基板导热性能优良,无需加装散热器,使电路尺寸减小,制作简单。实现在L波段上,通过峰值功率500 W、占空比30%的脉冲信号,插入损耗小于0.8 dB,隔离度大于35 dB。

关键词: 多芯片模块, 氮化铝陶瓷基板, 大功率开关

Abstract: Due to the strict requirements of high power,low insertion loss and high isolation,the paper makes a compromise of these parameters by selecting series/parallel circuits.Based on multi-chip module assembly technologies,the PIN diode chip is bonded on AlN ceramic substrate by highly conductive adhesive.Comparingwith conventional substrate materials,AlN has good thermal conductivity whicheliminatesthe heat sinkand reduces circuit size.The AlN-basedL-band power switch is capable of endure the pulse signal with 500 W peak power and 30%duty ratio and achieves 0.8 dB or less insertion loss and 35 dB or higher isolation.

Key words: multi-chip module, AlN ceramic substrate, power switch

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