中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2018, Vol. 18 ›› Issue (7): 42 -44. doi: 10.16257/j.cnki.1681-1070.2018.0080

• 微电子制造与可靠性 • 上一篇    下一篇

S波段宽带大功率内匹配器件设计

徐永刚,李 飞,钟世昌   

  1. 南京电子器件研究所,南京 210016
  • 出版日期:2018-07-20 发布日期:2020-02-21
  • 作者简介:徐永刚(1976—),男,湖北武汉人,研究生学历,高级工程师,现从事射频及微波功率放大器模块设计与内匹配功率合成技术研究。

Design of S-band Broadband High Power Internally Matched Device

XU Yonggang, LI Fei, ZHONG Shichang   

  1. Nanjing Electric Devices Institute, Nanjing 210016, China
  • Online:2018-07-20 Published:2020-02-21

摘要: 针对S波段宽带大功率内匹配功率放大器,开展了内匹配电路的设计、合成以及内匹配电路的测试等研究工作。管芯的输入输出阻抗通过负载牵引及模型技术提取,宽带功率分配器及合成器电路采用二项式多节阻抗匹配变换器实现。内匹配器件测试结果表明,在输入连续波信号和28 V漏极工作电压条件下,器件在2.0~4.0 GHz带内实现大于100 W的输出功率和大于45%的漏极效率,其中最高输出功率和最大漏极效率分别达到150W和65%,带内功率增益大于9d B,功率起伏小于1.8d B。

关键词: 宽带, 大功率, 内匹配

Abstract: S-band broadband high power GaN internal matching technology was researched in the paper. The input and output impedance of the device were attained with load-pull and modeling technique, the broadband power divider / combiner circuit was realized by using binomial impedance transformer. The internally matched device demonstrates a continuous output power of more than 100 W and drain efficiency of over 45% with the maximum output power and drain efficiency of 150 W 65%, the power gain of over 9 dB between 2.0~4.0 GHz, at operating drain voltage of 28 V.

Key words: broadband, high power, internal matching

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