关键词: GaN功率管, VHF, 功率放大模块, 长脉宽, 高增益, 大功率

Abstract: This article designs a power amplifier module based on GaN HEMT device. The module multi-stage cascade form is composed of a high-gain GaAs monolithic, low-power GaN devices and high-power GaN devices. The results showed that the device presented good performances of output power more than 600 W, more than 75 % added efficiency, more than 52 dB power gain in the band of 220 MHz to 270 MHz under the conditions of 46 V working voltage, 3 ms pulse width and 30 % duty cycle.

Key words: GaNtransistor, VHF, poweramplifiermodule(PA), widepulse, highgain, highpower