中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2020, Vol. 20 ›› Issue (12): 120301 . doi: 10.16257/j.cnki.1681-1070.2020.1201

• 电路设计 • 上一篇    下一篇

一种宽范围输入电压的驱动电路设计

张艳飞;曹正州   

  1. 中微亿芯有限公司, 江苏 无锡 214072
  • 收稿日期:2020-07-02 发布日期:2020-07-09
  • 作者简介:张艳飞(1981—),女,黑龙江佳木斯人,2004年毕业于长春理工大学,高级工程师,现任无锡中微亿芯有限公司副总经理,主要从事可编程器件及相关电路的设计技术研究。

A Design of DriverCircuit with Wide Input Voltage

ZHANG Yanfei, CAO Zhengzhou   

  1. East Technologies Inc., Wuxi 214072, China
  • Received:2020-07-02 Published:2020-07-09

摘要: 设计了一种具有宽范围输入电压的驱动电路,作为BUCK型DC-DC电源芯片的功率开关管和同步整流管的驱动。采用高压深N阱隔离技术实现了宽范围电压的输入;采用自适应死区时间控制,实现了功率开关管和同步整流管的岔开导通,从而降低了功耗。该电路基于UMC 0.25 μm 5~100 V 2P5M BCD工艺完成设计,仿真结果表明,输入电源电压范围为5 ~100 V;信号HO的下降沿到LO上升沿的延迟时间为75 ns,LO的下降沿到HO上升沿的延迟时间为71 ns;高边驱动的上拉电流和下沉电流最大值分别为2.17 A和2.33 A,低边驱动的上拉电流和下沉电流最大值分别为2.83 A和3.21 A。

关键词: 功耗, 电源芯片, 驱动电路

Abstract: A gate driver circuit with wide input voltage is presented, which is used in the BUCK type DC-DC chip to driver power switch and synchronous rectifier. High voltage N well isolation technology is used in this circuit to achieve wide input voltage, and adaptive dead time control technology is used in this circuit to achieve power switch and synchronous rectifier action in different time thus to reduce the power. This design is based on UMC 0.25 μm 5-100 V 2P5M BCD technology to complete the schematic. The simulation results show that the input voltage range is 5-100 V;the delay from signal HO falling edge to signal LO rising edge is 75 ns, the delay from signal LO falling edge to signal HO rising edge is 71 ns; the maximum source current and sink current of the high side are 2.17 A and 2.33 A; the maximum source current and sink current of the low side are 2.83 A and 3.21 A.

Key words: power, voltagechip, drivercircuit

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