关键词: 电阻率, 薄膜, 稳定性

Abstract: Silicon epitaxial resistivity is an important control parameter for the production control of silicon epitaxial products. Conventional method for testing is mercury C-V test. Its test stability has always been a technical difficulty.The main factors affecting the test stability include the quality and thickness of the oxide film on the front and back of the test piece.In this paper, the micro-processing cavity dynamic thin film technology is used to effectively improve the stability and repeatability of the film quality on the front surface of the silicon epitaxial wafer, and to confirm the optimal back seal thickness of the silicon wafer through experimental comparison, effectively improving the stability of the silicon epitaxial resistivity test.

Key words: resistivity, film, stability