关键词: 连续波, 氮化镓, 大功率, 内匹配功率管, C波段

Abstract: A C-band high power continuous wave GaN internally matched transistor has been developed. The power device was combined with four paralleled GaN high electron mobility transistor (HEMT) dies whose gate-width is 12 mm, the total gate-width is 4 mm ′ 12 mm. The transistor impedance is extracted by Load-pull measurement and transistor large signal modeling technique, and the matching circuit design is based on the transistor impedance. The matching circuit design fully considers the influence of synthetic loss. The power device has output power of more than 200 W, power gain of more than 10 dB and power-added efficiency of more than 50% at the frequency range of 4.4 ~ 5 GHz.

Key words: continuouswave, GaN, highpower, internallymatchedtransistor, C-band