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中国电子学会电子制造与封装技术分会会刊

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面向CMOS图像传感器的噪声抑制研究进展

陈建涛1,郭劼2,钟啸宇1,顾晓峰1,虞致国1   

  1. 1. 江南大学集成电路学院,江苏 无锡  214401;2. 中电海康无锡科技有限公司,江苏 无锡  214028
  • 收稿日期:2024-10-28 修回日期:2025-01-07 出版日期:2025-01-20 发布日期:2025-01-20
  • 通讯作者: 虞致国
  • 基金资助:
    江苏省重点研发计划(BE2023019-3)

Research Progress on Noise Suppression for CMOS Image Sensors

CHEN Jiantao1, Guo Jie2, ZHONG Xiaoyu1, GU Xiaofeng1, YU Zhiguo1   

  1. 1. School of Integrated Circuits, Jiangnan University, Wuxi 214401, China; 2. Cethik Wuxi Technology Co., Ltd., Wuxi 214028, China
  • Received:2024-10-28 Revised:2025-01-07 Online:2025-01-20 Published:2025-01-20
  • Contact: Zhi-Guo YU

摘要: 作为一种典型的固体成像传感器,CMOS图像传感器(CIS)利用标准的CMOS工艺将像素、信号处理电路集成到一块芯片上。在CIS的设计过程中,噪声的存在会给图像引入随机变化,带来图像质量下降、信噪比下降等不利影响,尤其是在低光照条件下,这种影响更加明显。因此,为了提高CIS的成像质量,必须采取措施来最大限度地减小噪声的影响。本研究回顾了CIS的架构和典型的噪声模型,从像素单元和读出电路两方面详细分析了各种噪声抑制方法的最新进展和各项指标对比,并讨论和展望了设计低噪声CIS可能的发展方向。

关键词: CMOS图像传感器, 低噪声, 相关多采样, 模数转换器

Abstract: As a typical solid-state imaging sensor, CMOS image sensors (CIS) employ a standard CMOS process to integrate pixels and signal processing circuits into a single chip. However, unavoidable noise in the design process of CIS could introduce random variations to images, which have an adverse effect on the image quality and signal-to-noise ratio, particularly in low-light conditions. It is therefore necessary to take measures to minimize the effects of noise as much as possible in order to improve the imaging quality of CIS. This study reviews the architecture and typical noise model of CIS, analyzes in detail the latest progress and comparison of various noise suppression methods and various indexes from both pixel units and readout circuits, and discusses and looks forward to the possible development direction of designing low-noise CIS.

Key words: CMOS image sensor, low noise, correlated multiple sampling, analog-to-digital converter