中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2023, Vol. 23 ›› Issue (7): 070303 . doi: 10.16257/j.cnki.1681-1070.2023.0093

• 电路与系统 • 上一篇    下一篇

一种X波段低相位噪声国产化频率源设计

王玲玲;蒋乐;方志明   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡?214035
  • 收稿日期:2023-01-03 出版日期:2023-07-26 发布日期:2023-06-08
  • 作者简介:王玲玲(1987—),女,安徽安庆人,硕士,工程师,主要研究方向为微波射频电路设计。

Design of Localized Frequency Source with Low Phase Noise in X-Band

WANG Lingling,JIANG Le,FANG Zhiming   

  1. ChinaElectronics Technology Group No.58Research Institute, Wuxi 214035, China
  • Received:2023-01-03 Online:2023-07-26 Published:2023-06-08

摘要: 介绍了一种工作在X波段的低相位噪声、100%国产化频率源的工程设计方法。该方法采用锁相环(PLL)+压控振荡器(VCO)经典电路产生频率信号。分析了PLL相位噪声理论模型,对比了同封装的国产PLL芯片和进口PLL芯片两种方案,并对实物进行了测试。试验结果表明,该频率源可稳定输出频率为8.8 GHz、功率约为-5 dBm[史敏1]?的微波信号。采用国产PLL芯片制作的频率源相位噪声优于采用进口PLL芯片制作的频率源1~2dB,可做到优于[史敏2]?-101 dBc/Hz@1 kHz,-110 dBc/Hz@100 kHz。

关键词: 频率源, 锁相环, 低相位噪声, 100%国产化

Abstract: The engineering design of a low phase noise, and 100% localized frequency source operating in X-band is presented. The method uses a phase-locked loop (PLL) + voltage-controlled oscillator (VCO) classical circuit to generate the frequency signal. The PLL phase noise theoretical model is analyzed, two solutions of a domestic PLL chip and an imported PLL chip in the same package are compared, and the module component is measured. The measured results show that the frequency source can output a microwave signal with a stable frequency of 8.8 GHz and a power of about -5 dBm. The phase noise of frequency source made from the domestic PLL chip is slightly better than that made from the imported PLL chip by 1 dB to 2 dB, and can be better than -101 dBc/Hz@1 kHzand -110 dBc/Hz@100 kHz.

Key words: frequency source, phase-locked loop, low phase noise, 100% localized

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