关键词: 体硅, 绝缘层上硅, SiC, 高温SOI技术

Abstract: The high-temperature silicon-on-insulator (SOI) technology breaks through the high-temperature dilemma of bulk silicon semiconductor devices, and has been widely applied in cutting-edge fields such as oil and gas drilling, aerospace and defense equipment. In recent years, the third-generation wide-bandgap semiconductor power devices have become more and more mature and popular. Among them, SiC devices, due to their inherent high voltage resistance and high-temperature resistance, being very ideal for matching with SOI devices, can handle application scenarios that are difficult to achieve or simply unimaginable for bulk silicon based power devices, and provide system application designers with a new room for expansion. Based on the brief description of the high-temperature dilemma of bulk silicon semiconductor devices, the development status of high-temperature SOI technology are reviewed, and its future development directions and application prospects are discussed.

Key words: bulk silicon, silicon on insulator, SiC, high temperature SOI technology