关键词: 双面散热模块封装, 烧结银, 阵列, 散热, 热应力

Abstract: Based on the double-sided heat dissipation SiC half-bridge module with sintered silver as the chip interconnect layer, the shapes of sintered silver interconnect layer between the top surface of the chip and the substrate are changed into sheet, cylindrical array, and cuboid array, the heat dissipation and thermo-mechanical stress are simulated. The simulation results show that due to the high thermal conductivity of sintered silver, shape change of sintered-silver layer has little effect on the heat dissipation performance. Compared with that of the sheet sintered silver interconnection module, the junction temperatures of the modules with cylindrical array and cuboid array sintered silver interconnections are only increased by a maximum of 0.2 ℃ and 0.14 ℃. Due to the effective dispersion and relief of thermal stress through multiple small connection points in the sintered silver interconnect layer of the array model, the residual thermal stress and working thermal stress of cylindrical and rectangular arrays are significantly reduced. The sintering residual thermal stress and working thermal stress of cylindrical array model are reduced by 8.57% and 3.16%, and the sintering residual thermal stress and working thermal stress of cuboid array model are reduced by 8.57% and 37.71%. And the cost of sintered silver can be reduced by reducing the sintered silver area, which has certain scientific research value and application significance.

Key words: double-sided heat dissipation module packaging, sintered silver, array, heat dissipation, thermal stress