中国电子学会电子制造与封装技术分会会刊

中国半导体行业协会封测分会会刊

无锡市集成电路学会会刊

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电子与封装 ›› 2026, Vol. 26 ›› Issue (4): 040301 . doi: 10.16257/j.cnki.1681-1070.2026.0034

• 电路与系统 • 上一篇    下一篇

支持预置位的电平转换结构设计

万璐绪,程雪峰,高国平   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡  214035
  • 收稿日期:2025-08-29 出版日期:2026-04-28 发布日期:2026-04-28
  • 作者简介:万璐绪(1993—),男,江苏连云港人,硕士,工程师,主要研究方向为高可靠通用接口电路设计。

Design of Level Shifter Structure that Supports Preset Position

WAN Luxu, CHENG Xuefeng, GAO Guoping   

  1. ChinaElectronics Technology Group Corporation No.58 Research Institute, Wuxi 214035, China
  • Received:2025-08-29 Online:2026-04-28 Published:2026-04-28

摘要: 在现代集成电路设计中,为了追求低功耗,不同的电路需要在不同的电压下工作。为了实现不同工作电压之间的正确信号传输,需要在两套电压域系统中间插入电平转换单元。提出了一种新的电平转换结构,利用电路现态和次态,实现了转换过程中的预开启和预关断,可以实现稳定的电平转换和快速的切换。选用180 nm CMOS工艺,测试结果表明该结构可以实现0.8 V到5.5 V的电平转换,最高转换速率可以达到804 Mbit/s。

关键词: 低功耗, 电平转换, 预开启, 预关断

Abstract: In modern integrated circuit design, to pursue low power consumption, different circuits need to work at different voltages. To achieve correct signal transmission between different operating voltages, a level shifter must be inserted between the two sets of voltage domain systems. A new level shifter structure that uses the current and next states of the circuit is proposed to achieve pre-activation and pre-turn-off during the conversion process, which can realize stable level shifting and fast switching. The 180 nm CMOS process is adopted, and the test results show that the structure can achieve level shifting from 0.8 V to 5.5 V, and the maximum speed reaches 804 Mbit/s.

Key words: low power consumption, level shifter, pre-activation, pre-turn-off

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