浅析CMOS图像传感器晶圆级封装技术

doi:10.16257/j.cnki.1681-1070.2021.1003

电子与封装 ›› 2021, Vol. 21 ›› Issue (10): 100108 . doi: 10.16257/j.cnki.1681-1070.2021.1003

所属专题：微系统与先进封装技术；封装技术

• “微系统与先进封装技术”专题 • 上一篇下一篇

浅析CMOS图像传感器晶圆级封装技术

马书英;王姣;刘轶;郑凤霞;刘玉蓉;肖智轶

华天科技电子有限公司，江苏昆山　215300

收稿日期:2021-05-17 出版日期:2021-10-26 发布日期:2021-06-22
作者简介:马书英（1988—），男，江苏镇江人，博士，高级工程师，华天科技(昆山)电子有限公司研究院院长，主要从事三维晶圆级先进封装技术研究。

Analysis of Wafer Level Packaging Technology for CMOSImage Sensor

MA Shuying, WANG Jiao, LIU Yi, ZHENG Fengxia, LIU Yurong, XIAO Zhiyi

Huatian Technology Electronics Co., Ltd., Kunshan 215300, China

Received:2021-05-17 Online:2021-10-26 Published:2021-06-22

摘要/Abstract

摘要：

CMOS（Complementary Metal Oxide Semiconductor）图像传感器(CMOS Image Sensor, CIS)正向着高速、大像素和低成本的方向发展，晶圆级封装技术由于其小型化、低成本的优点近年来受到广泛关注。根据结构和应用领域的不同，详细介绍了基于硅通孔(Through Silicon Via, TSV)技术的多种CMOS图像传感器晶圆级封装技术，并介绍和分析不同技术的应用场景和存在的挑战。

关键词: CMOS图像传感器, 晶圆级封装, 硅通孔技术

Abstract: CMOS (complementary metal oxide semiconductor) image sensor (CIS) is developing towards the direction of high speed, large pixel and low cost. Due to its miniaturization and low cost, wafer level packaging technology has been widely concerned in recent years. According to the different structures and application fields, a variety of CMOS image sensor wafer level packaging technologies based on through silicon via (TSV) technology are introduced in detail, and the application scenarios and challenges of different technologies are analyzed.

Key words: CMOSimagesensor, waferlevelpackaging, throughsiliconvia

中图分类号:

TN305.94

马书英, 王姣, 刘轶, 郑凤霞, 刘玉蓉, 肖智轶. 浅析CMOS图像传感器晶圆级封装技术[J]. 电子与封装, 2021, 21(10): 100108 .

MA Shuying, WANG Jiao, LIU Yi, ZHENG Fengxia, LIU Yurong, XIAO Zhiyi. Analysis of Wafer Level Packaging Technology for CMOSImage Sensor[J]. Electronics & Packaging, 2021, 21(10): 100108 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

浅析CMOS图像传感器晶圆级封装技术

Analysis of Wafer Level Packaging Technology for CMOSImage Sensor

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