关键词: 混合键合, 高密度互连, 三维集成, 高带宽内存

Abstract: In the era of the digital economy, the rapid advancement of emerging industries such as artificial intelligence, high-performance computing, big data, the Internet of Things, and autonomous driving has placed unprecedented demands on computational power. However, as advanced process nodes approach physical limits, the pace of Moore's Law has significantly slowed, and traditional wire bonding technologies are no longer capable of meeting the computational demands of high-performance chips in the digital economy. Against this backdrop, 3D integration technologies have emerged as a transformative solution. As a cornerstone of 3D integration technologies, hybrid bonding enables bump-less, high-density interconnections through the direct bonding of metal-to-metal layers and dielectric-to-dielectric layers. Compared with conventional bonding techniques, hybrid bonding not only achieves sub-micron or even nanometer-scale interconnect pitches but also significantly reduces signal delay and power consumption, thereby enhancing chip bandwidth and capacity. This makes hybrid bonding a critical enabler for high-performance chips. In the post-Moore era, hybrid bonding is regarded as a core development direction in advanced packaging, offering narrow-pitch, high-density, and compact interconnect structures to meet the stringent performance requirements of emerging applications. This article provides a comprehensive review of hybrid bonding technologies for high-density interconnects, with a focus on the novel materials, such as advanced metal passivation layers, and the key processes employed. Furthermore, it examines the current state of applications in fields like high-bandwidth memory (HBM) and discusses future development trends, aiming to provide valuable insights and guidance for the continued innovation and evolution of advanced packaging technologies.

Key words: Hybrid bonding, high-density interconnects, 3D integration, high-bandwidth memory