关键词: 三维集成, 铜-铜键合, 低温键合, 表面处理, 先进封装

Abstract: The increasing demand for high performance, high integration, and low power consumption in integrated circuit manufacturing has led to the adoption of three-dimensional integrated circuit (3D IC) technology as an effective solution for enhancing chip performance and integration. Copper, due to its low resistivity, excellent thermal conductivity, and resistance to electromigration, provides efficient electrical connections and effective thermal management. Low-temperature copper-copper bonding technology has garnered significant attention as one of the core technologies in advanced packaging, owing to its advantages in high-density interconnections, excellent electrical conductivity, and thermal performance. This paper addresses the primary challenges associated with Cu-Cu bonding technology and their corresponding solutions, summarizes several major low-temperature bonding techniques, and evaluates their advantages and limitations in practical applications. The study demonstrates that despite the technical bottlenecks faced by Cu-Cu low-temperature bonding technology, its continued advancement in materials and processes holds significant promise for future applications in electronic packaging.

Key words: three-dimensional integration, Cu-Cu bonding, low temperature bonding, surface treatment, advanced packaging