关键词: GaN, 高电子迁移率晶体管, 可靠性分析

Abstract: Third-generation wide-bandgap semiconductors, represented by GaN, are spearheading a new technological revolution in power electronics due to their superior physical properties. GaN high electron mobility transistors (HEMTs) demonstrate immense potential for realizing next-generation power electronic systems that are highly efficient, high-frequency, and compact. However, compared to mature Si-based technologies, reliability issues in GaN devices remain a critical bottleneck restricting their large-scale commercialization. A systematic review and summary of the current state of research on GaN device reliability is conducted. The fundamental structure and operating principles of a typical GaN HEMT are described, and its key electrical parameters are analyzed. The primary failure mechanisms of GaN devices under complex electrical, thermal, and mechanical stress are analyzed, with a focus on the mechanisms of device degradation and failure caused by the inverse piezoelectric effect, trapping effects, short circuits, and thermal stress concentration. Building on this foundation, key technologies for enhancing device reliability are further outlined and discussed, covering various aspects from optimizing material epitaxial growth and innovating thermal management solutions to adopting advanced device structures, aiming to provide a reference for scientists and engineers engaged in GaN technology research and application, and to promote the resolution of GaN device reliability challenges and accelerate their adoption in critical application domains.

Key words: GaN, high electron mobility transistor, reliability analysis