关键词: 氮化镓, 高电子迁移率晶体管, 可靠性分析

Abstract: Third-generation wide-bandgap semiconductors, represented by gallium nitride (GaN), are spearheading a new technological revolution in power electronics due to their superior physical properties. In particular, gan high electron mobility transistors (HEMT) demonstrate immense potential for realizing next-generation power electronic systems that are highly efficient, operate at high frequencies, and are compact. However, compared to mature silicon-based technologies, reliability issues in GaN devices remain a critical bottleneck restricting their large-scale commercialization. This paper aims to provide a systematic review and summary of the current state of research on GaN device reliability. First, the fundamental structure and operating principles of a typical GaN HEMT are described, and its key electrical parameters are analyzed. Subsequently, this paper dissects the primary failure mechanisms of GaN devices under complex electrical, thermal, and mechanical stress. A particular focus is placed on the physics of device degradation and failure induced by the inverse piezoelectric effect, trapping effects, short circuits, and thermal stress concentration. Building upon this analysis, the paper further reviews and introduces key technologies aimed at enhancing device reliability, covering various aspects from optimizing material epitaxial growth and innovating thermal management solutions to adopting advanced device structures. This review is intended to serve as a valuable reference for scientists and engineers engaged in GaN technology research and application, with the goal of promoting the resolution of GaN device reliability challenges and accelerating their adoption in critical application domains.

Key words: GaN, High Electron Mobility Transistor, Reliability Analysis