关键词: 碳纳米管场效应晶体管, 静电放电防护, 能带结构分析

Abstract: Aiming at the problems of small failure current and low failure voltage of electrostatic discharge (ESD) protection devices for carbon-based integrated circuits, two new types of carbon nanotube field effect transistor (CNTFET) ESD protection devices are systematically proposed based on the synergistic design theory of the gate-controlled electric field modulation technique and dynamic potential modulation. The DC characteristics of conventional CNTFETs are studied, when a high gate voltage is applied, the CNTFET is in a high-resistance state, meeting the design requirements for ESD protection. Based on this, a gate-drain (GD) CNTFET structure is innovatively proposed, and experimental results show that the failure current of the GD-CNTFET reaches 93 mA, but the failure voltage is only 46 V. Further, a CNTFET with a floating electrode structure (FE-CNTFET) is proposed through the synergistic design of gate voltage modulation and dynamic potential modulation, which can effectively inhibit the high electric field concentration of the gate oxide layer, and achieve a failure voltage of 79 V. The novel devices provide important design ideas for the ESD protection system of carbon-based integrated circuits.

Key words: carbon nanotube field effect transistor, electrostatic discharge protection, energy band structure analysis