关键词: 低噪声放大器, TSMC40nm, CMOS, 宽带, 低功耗

Abstract: A broadband low-noise amplifier (LNA) with operating frequency covering Sub-6G is proposed. The circuit adopts the structure of resistive self-biased class-AB amplifiers cascaded with a common source and common gate amplifier. It has the characteristics of high gain and low power consumption while realizing broadband operation. The LNA is designed with TSMC 40 nm CMOS process. The gain of the LNA is more than 27 dB, the noise figure is below 2.6 dB, the third order input intercept point is -5.6 dBm@6 GHz, the 1 dB compression point is 3.4 dBm@6 GHz, the static power consumption is only 0.94 mW, and the layout area is 0.014 mm² at an operating voltage of 1.3 V.

Key words: low-noise amplifier, TSMC 40 nm, CMOS, broadband, low power consumption