基于硅通孔的双螺旋嵌套式高密度电感器三维结构及解析模型*

doi:10.16257/j.cnki.1681-1070.2025.0097

电子与封装 ›› 2025, Vol. 25 ›› Issue (9): 090401 . doi: 10.16257/j.cnki.1681-1070.2025.0097

基于硅通孔的双螺旋嵌套式高密度电感器三维结构及解析模型^*

尹湘坤¹，马翔宇¹，王凤娟²

1. 西安电子科技大学集成电路学院模拟集成电路与系统教育部重点实验室，西安 710071；2. 西安理工大学光子功率器件与放电调控陕西省高等学校重点实验室，西安 710048

收稿日期:2025-01-21 出版日期:2025-09-28 发布日期:2025-02-27
作者简介:尹湘坤（1983—），男，湖南邵阳人，博士，副研究员，硕士生导师，主要研究方向为射频/微波集成电路及微系统、Chiplet系统集成、三维集成电路设计。

Three-Dimensional Structure and Analytical Model of Double Helix Nested High-Density Inductor Based on Through Silicon Via

YIN Xiangkun¹, MA Xiangyu¹, WANG Fengjuan²

1.The Key Laboratory of Analog Integrated Circuits, School of Integrated Circuits,Xidian University, Xi’an 710071,China; 2. The Key Laboratory of Photonic Power Devices and Discharge Regulationin Shaanxi Province's Institutions ofHigher Education, Xi'an University of Technology, Xi’an 710048,China

Received:2025-01-21 Online:2025-09-28 Published:2025-02-27

摘要/Abstract

摘要： 为了满足射频系统微型化、集成化发展对无源电感器在高电感密度、硅基三维集成等方面的需求，基于硅通孔技术提出了一种硅基三维集成的高密度电感结构，并建立了精确的电感解析模型。该结构采用硅通孔和重布线层的三维嵌套实现了多个螺旋层的叠加，利用螺旋层之间的磁场耦合增强了硅衬底三维空间的磁场强度，实现了119.7 nH/mm²的电感密度，通过减小平行金属的电场耦合长度降低了寄生电容，实现了~5 GHz的自谐振频率和高品质因数。所提出的电感解析模型与有限元仿真结果误差小于3.2%，证明了该模型的精确性。提出的双螺旋嵌套式电感器采用硅基三维集成结构实现，具有较高的电感密度和良好的宽频特性，为射频系统的无源电感微型化设计提供了重要解决方案。

关键词: 硅通孔, 嵌套式电感器, 双螺旋, 三维集成电路

Abstract: To meet the requirements for high inductance density and silicon-based three-dimensional integration in passive inductors for miniaturized and integrated radio frequency systems, a high-density inductor structure based on through silicon via technology is proposed for silicon-based 3D integration, along with an accurate inductance analytical model. This structure utilizes through silicon via and redistribution layers in a three-dimensional nested configuration to stack multiple spiral layers. The magnetic field strength within the three-dimensional space in silicon substrate is enhanced by the magnetic field coupling between these spiral layers, achieving an inductance density of 119.7 nH/mm². By reducing the electric field coupling length of parallel metal layers, parasitic capacitance is minimized, resulting in a self-resonant frequency of ~5 GHz and a high-quality factor. The proposed inductance analytical model demonstrates accuracy, with its results differing from finite element simulations by less than 3.2%. The proposed double helix nested inductor, implemented with a silicon-based three-dimensional integration structure, demonstrates high inductance density and excellent wideband characteristics, providing an important solution for the miniaturization of passive inductors in radio frequency systems.

Key words: through silicon via, nested inductor, double helix, three-dimensional integration circuit

中图分类号:

TN305.94

尹湘坤，马翔宇，王凤娟. 基于硅通孔的双螺旋嵌套式高密度电感器三维结构及解析模型^*[J]. 电子与封装, 2025, 25(9): 090401 .

YIN Xiangkun, MA Xiangyu, WANG Fengjuan. Three-Dimensional Structure and Analytical Model of Double Helix Nested High-Density Inductor Based on Through Silicon Via[J]. Electronics & Packaging, 2025, 25(9): 090401 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

基于硅通孔的双螺旋嵌套式高密度电感器三维结构及解析模型^*

Three-Dimensional Structure and Analytical Model of Double Helix Nested High-Density Inductor Based on Through Silicon Via

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