关键词: 氮化镓, 宽带, 低噪声放大器

Abstract: Based on 100 nm GaN high electron mobility transistor(HEMT) technology of Nanjing Electronic Devices Institute, a 6-18 GHz low noise amplifier(LNA) was designed and fabricated. The low noise monolithic circuit has been designed using a 3-stage topology. Under the condition of 12 V voltage and 70 mA current，measured results show that the noise figure is below 1.7 dB within the bandwidth of 6-18 GHz, the small signal gain is higher than 25 dB, voltage standing wave ratio is less than 2, and output power at 1 dB gain compression point is more than 10 dBm. Current reused technology were adopted by the first two stage, which decreased the DC consumer; the last stage used parallel feedback structure to improve the gain flatness. The chip dimension is 2.0 mm×1.35 mm. Keywords: GaN；broadband；low noise amplifier.

Key words: GaN, broadband, low noise amplifier