关键词: 纳米浆料, 烧结, 功率器件, 电子封装技术, 烧结纳米铜

Abstract: With the development of materials for power electronic devices, third-generation wide-bandgap semiconductors (such as SiC and GaN) have emerged as ideal materials for power devices due to their remarkable performance. However, traditional tin-based packaging materials have difficulties to meet the requirement of high-power and high-temperature applications. As a result, researchers have begun to focus on nano pastes that can be sintered at low temperatures and serve at high temperatures. These micro and nano scale particles, including copper and silver, can be sintered into solder joint structures with high melting point, high thermal conductivity, and high performance. This article discusses the recent research advancements in sintering pastes used for power device packaging from three perspectives: sintering mechanisms, sintering materials, and sintering processes. Specific topics include micro and nano Ag paste, Cu paste, Ag-Cu composites, and other metallic pastes, as well as their corresponding processes such as thermal pressure sintering, pressureless sintering, and thin-film sintering techniques. These insights provide valuable references for the further development of sintering pastes.

Key words: nano paste, sinter, power devices, electronics packaging technology, nano sinter Cu